Effects of Process Parameters on the Adhesion of Copper Film on Polyethylene Tetrephthalate(Pet) Substrate Prepared by E
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Effects of Process Parameters on the Adhesion of Copper Film on Polyethylene Tetrephthalate(Pet) Substrate Prepared by ECRMOCVD Coupled with a Periodic DC Bias 1
Jin Hyun, Bup Ju Jeon, 1Dongjin Byun , and Joong Kee Lee Eco-Nano Research Center, Korea Institute of Science and Technology, P.O.Box 131, Cheongyang Seoul 130-650, Korea, 1Dept. of Materials Science & Engineering, Korea University, Seoul, 136-701, Korea ABSTRACT Characteristics of Cu/C:H films on the PET substrate prepared by ECR-MOCVD coupled with a DC bias under Cu(hfac)2-Ar-H2 was investigated with special attention to process parameters. Our results showed that the Cu/C:H film has strongly adhere with the polymer substrate by chemical bonding and exhibited wide range of electrical conductivity that could be controlled by process parameters. The increase in H2/Ar ratio, microwave power and negative DC bias voltage brought on the higher pulling strength between Cu/C:H films and PET substrate. The effects of surface pretreatments of polymer substrate on pulling strength were insignificant in the range of our experimental range.
INTRODUCTION Metallized polymers are very interesting materials for microelectronic packing, organic LCD, magnetic tapes and EMI shielding purpose[1,2]. For these applications, good adhesion between the metallic layer and plastic substrate is required to prevent the film from peeling off in practical use. The conventional methods such as magnetron sputtering and electroplanting have some problems due to poor adhesion and wastewater, respectively [3]. Recently, we found that chemical vapor deposition by using organometallic precursors could be possible at room temperature when a periodic negative voltage is applied to the near of the polymer substrate. The periodic negative voltage is generated from a DC bias, which attracts ions and radicals to form nucleation on the surface of the substrate. The high efficiency in exciting the reactants in ECR plasma coupled with a periodic negative voltage from the DC bias allows the deposition of films at room temperature with good adhesion between the metallic film and polymer substrate[4]. In present study, we discuss the relationship between process parameters and adhesion of Cu/C:H films prepared by ECR MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) with a periodic DC bias system. We also investigate effect of pretreatment on
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adhesion of deposited film. Employed pretreatment methods in this study were such as O2 plasma, chromo-sulfuric acid treatment, sand blasting, and Ar ion implantation. EXPERIMENTAL The Cu/C:H films were prepared at room temperature by ECR-MOCVD under the following conditions : working pressure of 25 mTorr, bubbler pressure of 200 Torr, H2/Ar ratio of 0-0.33, total flow rate of 100sccm, negative DC bias voltage of 700-1100V, microwave power of 200-700 W. Cu(hfac)2 (hfac: 1,1,1,5,5,5,-hexafluoro-2,4-pentandione) with purity 99.9% and hydrogen were used as a source of copper and reactive gas, respectively. Polyethylene terep
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