Effects of Sputtering Power and Annealing Temperature on the Properties of Sc-doped ZnO Thin Films
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0928-GG14-02
Effects of Sputtering Power and Annealing Temperature on the Properties of Sc-doped ZnO Thin Films Ming-Hua Shiao1, Cheng-Chung Jaing2, Yu-Jia Huang3, Chien-Ying Su4, and Chih-Jung Lu5 1 Planning & Promotion Division, Instrument Technology Research Center, National Applied Research Laboratories, 20 R&D Road VI, Hsinchu Science Park, Hsinchu, 300, Taiwan 2 Department of Optoelectronic System Engineering, Ming Hsin University of Science & Technology, No. 1 Hsin Hsin Road, Hsin Feng, Hsinchu, 304, Taiwan 3 Department of Electronic Engineering, Ming Hsin University of Science & Technology, No. 1 Hsin Hsin Road, Hsin Feng, Hsinchu, 304, Taiwan 4 Vacuum Technology Division, Instrument Technology Research Center, National Applied Research Laboratories, 20 R&D Road VI, Hsinchu Science Park, Hsinchu, 300, Taiwan 5 Department of Materials Engineering, National Chung Hsing University, 250, Kuo Kuang Rd., Taichung, 402, Taiwan ABSTRACT Sc-doped ZnO thin films were deposited on Corning 1737 glasses by using RF magnetron co-sputtering system with Sc2O3 and ZnO targets. Different sputtering powers of Sc2O3 target and post annealing of 550°C for 2 hr were investigated to understand the effect on microstructural, optical and electrical properties of Sc-doped ZnO thin films. From X-ray diffraction (XRD) results, the Sc-doped films have (002) preferred orientation. Cross-sectional scanning electron microscope (SEM) show that the Sc-doped ZnO thin films have columnar structure before and after annealing procedure. Atomic force microscopy (AFM) surface measurement also shows that the surface roughness of the films was smoother when the Sc2O3 sputtering power increased. The optical transmission of as deposited Sc-doped films in the visible region all exceeded 80%, and increased about 3% after samples annealed. Electrical resistivity measurement reveals that the as-deposited Sc-doped ZnO thin films had lowest resistivity of 0.97 Ω cm when the Sc2O3 sputtering power was 125W. After annealing the lowest resistivity decreased to 9.85 × 10-2 Ω cm in which 200W of the Sc2O3 sputtering power was applied. INTRODUCTION Transparent and conductive oxide (TCO) films with low resistivity and high transmittance in the visible wavelength range have been widely applied for opto-electronic applications in recent years. Many techniques such as DC or RF magnetron sputtering, evaporation, sol-gel, chemical vapor deposition (CVD), and etc. are applied to prepare impurity-doped zinc oxide (ZnO) thin films. Different dopants, such as In, B, Al, Ga, Si, Ge, Ti and etc., are doped into ZnO in order to find out low resistivity but high transmittance for specific applications. However, the microstructure, chemical composition, optical and electrical properties of TCO coatings are affected deeply by process parameters. In this study, the RF magnetron sputtering system was used to prepare Sc-doped ZnO thin films. The sputtering power of Sc2O3 target and post annealing are studied to understand the effect on the microstructure, chemical, optical and ele
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