Effects on the amorphous Ga 2 O 3 film surfaces by sub-IB-metal-nano-layers
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MRS Advances © 2019 Materials Research Society DOI: 10.1557/adv.2019.54
Effects on the amorphous Ga2O3 film surfaces by sub-IB-metal-nano-layers L. I. Juárez-Amador1*, M. Galván-Arellano2, Y. M. Hernández-Rodríguez1, J. A. AndracaAdame3, G. Romero-Paredes2 and R. Peña-Sierra2 1 Programa de Doctorado en Nanociencias y Nanotecnología, CINVESTAV-IPN, Av. Instituto Politécnico Nacional 2508, Ciudad de México, C.P. 07360, México.
2 Department of Electrical Engineering, Solid State Electronic Section (SEES), CINVESTAV-IPN, Av. Instituto Politécnico Nacional 2508, Ciudad de México, C.P. 07360, México.
3 Instituto Politécnico Nacional, UPIIH, Carretera Pachuca-Actopan kilómetro 1+500, San Agustín Tlaxiaca, Hidalgo “Ciudad del conocimiento y la cultura”, México.
Abstract
This work reports by the first time a method to control the geometry of Ga2O3 films nanocrystallites at 350 qC. The formation of controlled shaped nano-crystallites of J-Ga2O3 from amorphous Ga2O3 films grown by RF-Sputtering at room temperature driven by nanolayers of group IB metals (Cu, Ag or Au) is studied. The reported results can be explained by the role of subsurface metal nano-layers and the non-equilibrium nature of the sputtering processes. To study the effects on the surface structure and their optical properties arrays of amorphous-Ga2O3/IB-metal/amorphous-Ga2O3 were annealed in dry N2 atmosphere at 350 °C by 50, 100 and 150 min. The experimental results can be explained by the evolution of the amorphous character of the films amorphous films towards the nanocrystalline J-Ga2O3 phase driven by the metal nano-layer seed nature. As the annealing time was increased the transition from amorphous-Ga2O3 to the nanocrystalline γ-Ga2O3 phase was detected by Xray diffraction analysis. The transition to the nanocrystalline γ-Ga2O3 is demonstrated by the formation of octahedral, triangle and ball shape nanocrystallites with sizes of ~5 to 50 nm according to FE-SEM analysis. The influence of the metal nano-layer is clearly seen by the shift of the plasmon frequency resonance produced by the Ga 2O3/IB-metal/Ga2O3 arrays in the region from 400 to 600 nm caused by the modification of the interface Ga 2O3/IB-metal produced by the applied annealing stages.
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1. INTRODUCTION The technology of the metal oxides materials is of great relevance on the diverse fields of modern technological applications. For example, in microelectronics the silicon oxide (SiO2) technology plays a fundamental role, other oxides such as transparent conductive oxides (TCO) are also essential in optoelectronics or on photovoltaic devices. Related to this family the materials allied to the gallium oxide (Ga2O3) has acquired great relevance due to the power electronic device applications and its great potential in photocatalysis for the env
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