Electrical and Optical Properties of Si + and P + Implanted InP:Fe

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ELECTRICAL AND OPTICAL PROPERTIES OF Si+ AND P+ IMPLANTED InP:Fe HONGLIE SHEN,GENQING YANG,ZUYAO ZHOU,GUANQUN XIA AND SHICHANG ZOU, Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China ABSTRACT Dual implantations of Si÷ and P* into InP:Fe were performed ÷ ions were ,I•mplpnted by both at 200 C and room temperature. 150keV with doses ranging from 5x10 /cm to lx10/cm , while by 110keV, 160keV and 180keV with doses P* ions were implanted 3 and Hall measurements to lxl1 /cm'. ranging from lxlO1 /cm' photoluminescence spectra were used to characterize the silicon samples. It was found that annealed nitride encapsulated and P+ dual by Si4 activation can be obtained enhanced implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of For a dose of implantel Si with the same implant dose. 70% 5x10 /cm , the highest activation for dual implants is while 0the activation for single implant is 40% after annealing at 750 C for 15 minutes. PL spectrum measurement was carried out at temperatures from ilK to 10OK. A broad band at about 1.26eV Si÷ implanted samples, of which the intensity was found in increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence is a complex (Vp-Sip) related of the broad band showed that it band. All these results indicate that silicon is an amphoteric species in InP. INTRODUCTION and semiconductor for microwave an important InP is is Silicon implantation applications. optoelectronic device widely used to selectively form source and drain and the active channels of the devices on semi-insulating InP. As a binary compound like GaAs, InP suffers stoichiometry disturbance not only from ion implantation (1], but also from the substitution of the implanted dopant. A theory developed by Heckingbottom (2] predicted that when the stoichiometry of binary semiconductor is then high maintained during ion implantation and annealing, electrical activation and high maximum carrier concentration should be attained. Some successes have been reported in GaAs (3-5]. As for InP, Kou-Wei Wang (6] reported his result on the elimination of the in-diffusion of Be dopants utilizing a phosphorous co-implant. Up to now, the amphoteric property of Si in GaAs has been proved by many authors [5,7]. Silicon was found to be not an amphoteric species in liquid-phase epitaxial InP [8]. Recently Farley [9] pointed out that at high Si concentration, Si atoms reside almost equally on*In and P sites, so that an increase in almost no 10 9/cm3 produces concentration above Si atomic In an earlier paper increase in the net donor concentration. 4 (10], we showed that by using P co-implantation at 200 C and a peak electron concentration as high rapid tperm~l annealing, as 5x10 /cm was obtained. nondestructive a simple (PL) is Photoluminescence the lattice characterize used to technique measurement Mat. Res. Soc. Symp. Proc. Vol. 201.

1991 Materials Research Society

326

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