Electrical Properties of Compact Drop-Casted Cu 2 SnS 3 Films
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https://doi.org/10.1007/s11664-020-08380-8 Ó 2020 The Minerals, Metals & Materials Society
Electrical Properties of Compact Drop-Casted Cu2SnS3 Films PRASHANT R. GHEDIYA ,1,2,3,5 TAPAS K. CHAUDHURI,2 VIDUR RAJ,3 DHAVAL VANKHADE,2,4 HARK HOE TAN,3 and CHENNUPATI JAGADISH3 1.—Department of Physics, Marwadi University, Rajkot-Morbi Highway, Rajkot, Gujarat 360003, India. 2.—Dr. K. C. Patel Research and Development Centre, Charotar University of Science and Technology, Changa, Anand District, Gujarat 388421, India. 3.—Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia. 4.—Department of Physics, School of Science, GSFC University, Vadodara, Gujarat 391750, India. 5.—e-mail: [email protected]
We investigated temperature-dependent electrical conduction of Cu2SnS3 (CTS) thin films in the range of 77–500 K synthesized by drop-casting molecular ink. The films were directly formed by drop-casted molecular ink, consisting of a Cu+2-Sn+2-thiourea complex dissolved in a mixture of ethylene glycol–isopropyl alcohol and annealed. The CTS films have a smooth layer with a compact structure, as revealed by cross-sectional scanning electron microscopy. The films are p-type and show a band gap of 1.18 eV. The electrical conductivity and Hall mobility of the films were found to be 1.1 S/cm and 6.72 cm2 V1 s1, respectively. Data from temperature-dependent measurements show hopping and thermally activated conduction below and above 300 K, with an activation energy of 10 and 90 meV, respectively. Our results suggest that the drop-casted CTS films can be used as an absorber layer in thin film solar cells at an affordable cost. Key words: Copper tin sulfide, compact structure, drop-casting, Raman spectroscopy, tetragonal, electrical properties
INTRODUCTION There is a worldwide search for new earthabundant and non-toxic absorber materials for thin film solar cells (TFSCs) as an alternative to copper indium gallium disulfoselenide (CIGSSe) and cadmium telluride (CdTe), due to the scarcity of indium and gallium and the toxicity of cadmium. In view of this, in recent years, there has been focused research on Cu2ZnSn(SSe)4 (CZTSSe)-based solar cells due to their exceptional opto-electronic properties. CZTSSe solar cells have already achieved a photo-conversion efficiency (PCE) of 12.6% using hydrazine ink.1 However, detrimental effects, such as secondary phase, uncontrolled stoichiometry, and the
(Received April 25, 2020; accepted July 29, 2020)
formation of defects limit the widespread use of the high efficiency of CZTSSe solar cells.2 In this regard, copper–tin-based ternary chalcogenides (Cu-Sn-S(Se)), such as Cu2SnSe3 (CTSe) and Cu2SnS3 (CTS), play a crucial role as an alternative to CdTe, CIGSSe, and CZTSSe. In particular, Cu2SnS3 (CTS) is a p-type semiconductor made up of earth-abundant elements with a direct band gap (Eg) of about 1.1 eV and an absorption coefficient of 105 cm1.3,4 CTS has several crystal structures, including, tr
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