Electrical Transport in Heavily B-Doped Epitaxial Diamond and NCD
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0956-J03-02
Electrical Transport in Heavily B-Doped Epitaxial Diamond and NCD Milos Nesladek1, Phillipe Bergonzo1, Jiri Mares2, and Pavel Hubik2 1 DRT-LIST, CEA, Saclay, Bat 451, p.84, Gif sur Yvette, 91191, France 2 Institute of Physics, Czech Academy of Sciences, Cukrovarnicka 10, Praha 6, 16000, Czech Republic
Abstract: This paper deals with a LT transport study in B-doped diamond. To understand the electrical transport in heavily B-doped diamond and the influence of disorder onto the electrical transport, we have prepared nanocrystalline and epitaxial B-doped diamond films at CEA Saclay. The transport properties of these layers have been studied at the Institute of Physics Czech Academy of Sciences in Prague. It has been found that our B-doped nanocrystalline diamond exhibits also the SC transition, similarly as the original Russian work done on HPHT polycrystals or single crystal diamond. Additionally, the Raman properties of (111) epitaxial films are discussed.
1. Introduction: B-doped diamond has attracted recently much attention due to the discovery of superconductivity (SC) by Russian groups at Helium temperatures [1]. Heavily B-doped diamond close to the Mott’s metallic transition can also be used in applications for electrochemistry and nanobioelectronics [2]. Use of heavily B-doped diamond requires understanding about the transport mechanism [3,4,5,6]. Often, by high B-doping a local lattice disorder can be induced changing significantly the transport characteristics. To understand the transport characteristics in heavily B-doped diamond and the influence of disorder onto the electrical transport, we have prepared nanocrystalline and epitaxial B-doped diamond films at CEA Saclay. The transport properties of these layers have been studied at the Institute of Physics Czech Academy of Sciences in Prague. It has been found that our B-doped nanocrystalline diamond exhibits also the SC transition, similarly as the original Russian work done on HPHT polycrystals [1] or single crystal diamond [3,4]. To study the mechanism of SC low temperature (LT) magnetotransport measurements have been carried out. Based on an unusual behavior of magnetoresistance [5] we have concluded that the SC in nanocrystalline diamond can be induced by week localisation (WL) phenomena, allowing paring of parallel spins on WL orbitals, similarly as in BSC type of superconductors.
2. Experimental Details B-doped single crystal epitaxial layers and nanocrystalline diamond films have been grown at CEA Saclay, using a resonance cavity MW-CVD growth reactor, working at 2.45 GHz and using H2 and CH4 as gas sources for diamond growth and trimethyl boron (TMB) for doping. Upon increasing B doping in the gas phase, an intense blue color could be established for both epitaxial diamond and nanocrystalline diamond. The diamond films have been grown on glass substrates using several types of glass, such as Corning 1737 Corning Glass, Corning Eagle 2000 or Schott 45 glass and other substrates. An advantage of our reactor is the possibility of appl
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