Electrical Transport Phenomena of Single ZnO Nanowire Device Directly Measured Using Nano Manipulator
- PDF / 964,634 Bytes
- 8 Pages / 612 x 792 pts (letter) Page_size
- 15 Downloads / 172 Views
1258-P15-04
Electrical Transport Phenomena of Single ZnO Nanowire Device Directly Measured Using Nano Manipulator Sang-Won Yoon,1,2 Jong-Hyun Seo,1,2 Tae-Yeon Seong,2 Hoon Kwon,3 Kon Bae Lee,3,a) and Jae-Pyoung Ahn1,a) 1
Nano Analysis Center, Korea Institute of Science and Technology, Hawolkok-dong, Sungbukku, Seoul 130-650, Korea 2 Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea 3 School of Advanced Materials Engineering, Kookmin University, Seoul, 136-702, Korea Abstract The electrical transport of individual ZnO nanorod devices manufactured by focused ion beam (FIB) was investigated by the direct measurement of the electrical resistance at electrode junctions of cross-sectioned devices using two nanoprobes. The cathodoluminescence (CL) measurements were also performed to evaluate the crystallinity at the center and edge of the cross-sectioned ZnO nanorods. The electrical transport of the individual ZnO nanorod device depends strongly on the crystallinity of the ZnO nanorod itself and the carbon contents at Pt junctions. The ZnO-Au junction of the device acted as the fastest path for electrical transport. 1. Introduction ZnO nanorods have potential applications for transparent electrodes, gas sensors, nanoscale optoelectronic devices, piezoresponse force microscopy (PFM) and field effect transistors [1-5]. Most applications require details on the electrical properties of ZnO nanorods but they are not yet fundamentally understood. In practical, the electrical properties of ZnO nanorods have been mainly measured from the ensemble structure of ZnO bundle but not individual ZnO nanorods. Recently, the electrical properties of individual ZnO nanomaterials have been measured by various techniques using conductive AFM tips [6, 7], multiple scanning tunneling microscope (STM) tips [7, 8] and low energy electron point source (LEEPS) microscopy [9], involving the most popular ebeam lithography techniques [10, 11]. However, these methods have certain limitations to evaluate the devices using the individual ZnO nanomaterials, because the additional electrical resistance is induced by undefined contacts. For example, they have reported contradictory results on the electrical properties of ZnO nanomaterials which are categorized into three types of resistances, i.e., symmetrical [12], rectifying [3, 4, 13] and linear shapes [14, 15] due to contact problems between ZnO nanorods and electrodes. More recently, it is emerging issues to fabricate the device from individual nanowires by FIB [16, 17]. Here, there are inevitably several interconnections such as ZnO-Au, ZnO-Pt and Au-Pt junctions. In our previous paper, however, it was reported that the device prepared by the method contains additionally the unexpected resistance by contact problems at each junction and contaminations during FIB process. Such problems can be solved very well by metallurgical and electrical studies at the cross-sectioned area of devices.
a)
These authors contributed equally to this work. Correspondence should b
Data Loading...
