Electron bistability and switching effects in Mo/p-CdTe/Mo structure
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Electron bistability and switching effects in Mo/p‑CdTe/Mo structure G. S. Khrypunov1 · V. O. Nikitin1 · O. L. Rezinkin1 · A. N. Drozdov1 · A. V. Meriuts1 · O. V. Pirohov2 · M. G. Khrypunov1 · M. V. Kirichenko1 · A. R. Danyliuk1 Received: 6 November 2019 / Accepted: 17 January 2020 / Published online: 29 January 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract It has been experimentally shown that in a simple metal–semiconductor-metal structure with ohmic contacts, a reversible transition from a high-resistance state to a state with high electrical conductivity is possible under the influence of short current pulses of 80-ns duration with a peak voltage of more than 20 V. It was established that after the breakdown under static voltage, the structure irreversibly goes into a state with high electrical conductivity. At the same time, sections with negative differential resistance and negative differential conductivity appear on its low-frequency current–voltage characteristics at voltages less than 1 V. The most probable physical mechanisms that can provide such current–voltage characteristics are considered.
1 Introduction Among the instrumental structures based on cadmium telluride thin films, solar cells have the greatest application [1] due to the CdTe base layer band gap that is optimal for the photoelectric conversion of solar energy under earth conditions. At the same time, the use of this material in other electronics products is not so widely represented. However, the potential of this material for electronics can be as high as for the traditionally used compounds of the A3B5 group, since they have similar band structures with the presence of light and heavy carrier zones [2]. It has long been shown that structures using n-CdTe:Cl single crystals can have bistable S-type current–voltage characteristics (CVCs) with a switching voltage of several tens of volts [3–5]. In the most of works, crystals with n-type conductivity were investigated, and we know only one work in which crystals with p-type conductivity were studied [6]. In [7], it was theoretically shown that for a structure with n-CdTe:Cl, a region with negative differential conductivity should follow after a region with negative differential resistance. Non-linear static CVCs are observed in film structures * A. N. Drozdov [email protected] 1
National Technical University “Kharkiv Polytechnic Institute”, 2 Kyrpychova St., Kharkiv 61002, Ukraine
National University of Civil Defence of Ukraine, 94 Chernyshevskaya St., Kharkiv 61023, Ukraine
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based on cadmium telluride [8]; these can serve as the basis for the creation of a new class of electronic devices based on cadmium telluride if such CVCs are realized under highfrequency pulsed action. For example, it was theoretically shown in [9] that during generation–recombination process into thin semiconductor films, in the case of multiplication of charge carriers, a dynamic phase transition is possible [10], in which the threshold voltage is controlled
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