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H6.5.1

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1

2000

16

1

16

-2

-2

2

1

2000

2

1500

1

4250

1

1

4300

1

1

4350

4400

4250

1

4300

1

1

4350

4400

4350

4400

4350

4400

4000

4000

17

-2

17

-2

2000

2000

4250

1

1

4300

4350

4400

4250

4300

12000

12000

18

-2

18

6000

6000

4250

-2

4300

4350

4400

4250

4300

H6.5.3

5

10 3000

d2 c

4H SiC

(b)

b1

d1

g2

e2 d4

a1

a2

2000

c3

1000

d1

4000

x 20

3

10

T = 2K

c2

3000

4

10

Intensity

Relative Intensity (a.u.)

(a)

4H SiC

T = 20K

4

c2

2

10

e1 g2 g1

2000

f1

L1

1000 4260

4280

c1 d2

4300

4320

4340


  

a1

b1 4380

4400

4420

( ∆E = 47meV; Egx - E b= 429meV ) ( ∆E = 37meV; Egx - Ed = 414m

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