• PDF / 461,534 Bytes
• 6 Pages / 612 x 792 pts (letter) Page_size
• 46 Downloads / 292 Views

DOWNLOAD

REPORT

---

C5.6.1

Enhanced Dielectric Properties Of Compositionally Modified BST Based Thin Films For Voltage Tunable Microwave Devices M.W. Cole, W.D. Nothwang, C. Hubbard, E. Ngo, and M. Ervin U.S. Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A., (410) 306-0747 [email protected] ABSTRACT In this work, material compositional design and optimized film processing methods, were employed to simultaneously lower the dielectric loss and enhance the dielectric tunability of Ba0.6Sr0.4TiO3 (BST) based thin films without compromising the device impedance matching (εr 500) and high dielectric loss (tanδ >0.01). For phase shifter, and other tunable device applications, such high permittivities are not desirable from the standpoint of device impedance matching purposes, i.e., exceeds the required values for planar integrated microwave components, causing complications which lead to less efficient power transfer in the device thereby degrading device performance. As well, high dielectric loss, i.e., attenuation of the microwave signal, results in inferior device performance. In this paper, we report on our

C5.6.2

approach, via material compositional design and optimized film processing methods, to simultaneously lower the dielectric loss and enhance the dielectric tunability of Ba0.6Sr0.4TiO3 thin films without compromising the device impedance matching (εr