Improvement of dielectric properties of ZnO nanoparticles by Cu doping for tunable microwave devices
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Improvement of dielectric properties of ZnO nanoparticles by Cu doping for tunable microwave devices A. Selmi1,*, A. Fkiri2, J. Bouslimi3,4, and H. Besbes5 1
Laboratory of Materials Organisation and Properties (LR99ES17), Faculty of Sciences of Tunis, University of Tunis, El Manar, 2092 Tunis, Tunisia 2 Lab of Hetero-Organic Compounds and Nanostructured Materials (LR18ES11), Faculty of Sciences of Bizerte, University of Carthage, 7021 Zarzouna, Tunisia 3 Department of Physics, Faculty of Sciences, Taif University, Taif 888, Saudi Arabia 4 Department of Engineering Physics and Instrumentation, Institute of Applied Sciences and Technology, Carthage University, Tunis, Tunisia 5 Department of Physics, Faculty of Science, King Abdulaziz University, Jedda, Saudi Arabia
Received: 13 May 2020
ABSTRACT
Accepted: 4 September 2020
We report a facile chemical polyol method to synthesize Cu-doped ZnO nanoparticles with various levels of Cu. X-ray diffraction (XRD), transmission electron microscopy (TEM), and UV–Visible diffuse reflectance spectroscopy techniques were used to analyze the structural and optical properties of Zn1-xCuxO nanoparticles. The crystallite size varies between 9.8 and 18.9 nm and decreased with the increase of Cu doping. The band energy gaps of pure and Cu-doped ZnO samples are in the range 2.5–3.1 eV. The dielectric properties, ac conductivity and impedance analysis of Zn1-xCuxO nanoparticles were systematically investigated. It was revealed that the doping of ZnO by Cu (with low Cu molar content) leads to obtain high dielectric constant and low tangent loss, which are very encouraging for microwave semiconductor devices.
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Springer Science+Business
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1 Introduction In the last years, large bandgap semiconductors such as WO3 [1], ZnS [2], GaN [3], and ZnO [4, 5] have been used in various applications. Among them, the eco-friendly zinc oxide (ZnO) semiconductor material is being one of the preferred materials for many microelectronics applications due to their excellent
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https://doi.org/10.1007/s10854-020-04408-1
ferroelectric, photoelectric, piezoelectric, catalytic and dielectric properties [6–11]. Furthermore, ZnO nanoparticles have received great interest; thanks to their potential uses in nanotechnology such as luminescence [12, 13], photo-detection [14, 15], gas sensor [16, 17] and metal oxide semiconductor (MOS) [18]. Various methods were used to synthesize nanomaterials including chemical vapor deposition [19], laser
J Mater Sci: Mater Electron
ablation [20], sol gel process [21], solvothermal method [22, 23], micro-emulsion technique [24], hydrothermal method [25], and polyol method [26]. Among them, the polyol method is a simple and lowcost process that allows to produce ZnO nanoparticles with a narrow-size distribution, a controlled morphology, and a good crystalline quality. The polyol solvent acts simultaneously as a complexing agent, a surfactant, and a stabilizing agent, which lead to
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