Enhancement of diamond seeding on aluminum nitride dielectric by electrostatic adsorption for GaN-on-diamond preparation
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THE SCIENCE AND TECHNOLOGY OF VAPOR PHASE PROCESSING AND MODIFICATION OF SURFACES
Enhancement of diamond seeding on aluminum nitride dielectric by electrostatic adsorption for GaN-on-diamond preparation Xin Jia1, Jun-jun Wei1,a), Yabo Huang1, Siwu Shao1, Kang An1, Yuechan Kong2, Lishu Wu2, Zhina Qi1, Jinlong Liu1, Liangxian Chen1, Cheng-ming Li1 1
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China Nanjing Electronic Devices Institute, China Electronic Technology Group Corporation, Nanjing 210016, China a) Address all correspondence to this author. e-mail: [email protected] 2
Received: 1 August 2019; accepted: 11 December 2019
The development of GaN-on-diamond devices offers bright prospects for the creation of high-power density electronics. This article presents a process of fabricating GaN-on-diamond structure by depositing diamond films on dual sides, including heat dissipation diamond film and sacrificial carrier diamond film. Prior to heat dissipation diamond film layer preparation, aluminum nitride (AlN) is chosen as a dielectric layer and pretreated by nanodiamond (ND) particles, to enhance the nucleation density. Zeta potential measurements and X-ray photoelectron spectroscopy are used to analyze the AlN surface after each treatment. The results show that oxygen-terminated ND particles tend to adhere to an AlN surface because the oxygen-terminated NDs have – COOH and –OH groups, and hold a negative potential. On the contrary, fluorine-terminated AlN prefers to attract the hydrogen-terminated ND seeds, which resulted in higher diamond nucleation density. Based on this preliminary study, a dense high-quality GaN-on-diamond wafer is successfully produced by using AlN as the dielectric layer and a diamond film as the sacrificial carrier.
The process flow for creating GaN-on-diamond wafers and cross-section morphology of diamond/Si-GaN-on-diamond wafer structure; illustration is GaN-on-diamond.
Introduction The structure of Gallium nitride on diamond substrate (GaNon-diamond) can effectively enhance the heat dissipation performance of GaN-based electronic devices. However, the preparation of the GaN-on-diamond structure is quite complicated and highly demanding. This process not only requires a sophisticated technology about adding the sacrificial carrier and removing the original substrate but also needs a suitable dielectric layer to solve the thermal mismatch problem between the GaN and diamond. Currently, dielectric layer materials for GaN-on-diamond devices are primarily made of silicon nitride (SiN) or aluminum nitride (AlN) films [1, 2, 3, 4, 5]. Theoretically, the AlN has higher thermal conductivity and lower thermal mismatch with GaN/diamond than SiNx.
ª Materials Research Society 2020
However, the extremely low nucleation density of diamond on the AlN surface made AlN not suitable for dielectric layer. To date, some different surface pretreatments of AlN have been verified to enhance diamond nucleation (e.g., hydrogen plasma treatment and ne
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