Epitaxial growth of antiperovskite GaCMn 3 film on perovskite LaAlO 3 substrate
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We report on the magnetic and transport properties of the antiperovskite GaCMn3 film epitaxially grown on LaAlO3 using the pulsed laser deposition technique. Upon cooling from room temperature, the GaCMn3 film undergoes magnetic transitions from paramagnetic to ferromagnetic to antiferromagnetic. The Curie and Ne´el temperatures of the film shift to lower and higher temperatures, respectively, by comparison with those of the bulk sample. This discrepancy is mainly ascribed to the compressive strain effect induced by the lattice-mismatch between film and substrate. Negative magnetoresistance, which is about 20% at 0.5 T, is observed near the Ne´el temperature.
I. INTRODUCTION
The capability to fabricate materials with unique physical properties into thin films makes it possible to create a rich variety of electronic and magnetic devices. For instance, there is huge interest in the integration of perovskite oxides such as magnetoresistive manganite (La,A)MnO3 (A ⳱ Ca, Sr)1,2 and ferroelectric titanite (Pb,Zr)TiO33 with existing metal-based technology to make high-performance magnetic sensors and memories.4 The successful operation of these devices depends on the extent to which the film is highly textured on the substrate. For the epitaxial growth, lattice match between film and substrate is thus considered the most dominant factor. In particular, isostructural materials are generally required to make the hybrid film with a heterostructure.5 Recently, we found that the antiperovskite compound GaCMn3, isostructural with the perovskite manganite, exhibits giant magnetoresistance (GMR) at low magnetic field near the magnetic phase boundary.6 Furthermore, this material, despite its intermetallic nature, shows a close correlation among lattice, spin, and charge as found in the manganite.6,7 This correlated phenomenon, the magnetoelastic and GMR effect of GaCMn3, appears to be similar to that found in the doped manganite, but the underlying mechanisms are different mainly because GaCMn3 may be considered a class of itinerant intermetallic compound, but the doped manganite has much more complicated phenomena due to the metal–insulator transition driven by not only double exchange interaction
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J. Mater. Res., Vol. 17, No. 10, Oct 2002 Downloaded: 13 Mar 2015
but also by competitive interactions such as antiferromagnetic superexchange, orbital/charge ordering, Jahn– Teller instability, and so on. Nonetheless, an important common feature is that their structure is quite analogous, which prompted us to investigate the growth of the GaCMn3 film on the perovskite oxide substrate for its possible applications to hybrid magnetic devices. Herein, for the first time we report the successful growth of the GaCMn3 film on the perovskite LaAlO3 substrate using the pulsed laser deposition (PLD) technique and describe its structural, magnetic, and transport properties. II. EXPERIMENTAL
A polycrystalline sample of GaCMn3 was pr
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