Epitaxial Growth of Fe 3 Si Thin Films on (100) Magnesia Substrates
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1032-I14-10
Epitaxial Growth of Fe3Si Thin Films on (100) Magnesia Substrates Kensuke Akiyama1, Satoru Kaneko1, Teiko Kadowaki1, Yasuo Hirabayashi1, Azusa Kyoduka2, Yutaka Sawada2, Yoshihiko Kobayashi3, Kichizo Asai3, and Hiroshi Funakubo4 1 Electronics, Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, 243-0435, Japan 2 Tokyo Polytechnic University, 21583 Iiyama, Atsugi, 243-0297, Japan 3 Applied Physics and Chemistry, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, 182-8585, Japan 4 Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midoriku, Yokohama, 226-8502, Japan ABSTRACT High-quality (100) epitaxial Fe3Si films were grown on (100) MgO substrates by RFmagnetron sputtering at 700oC. After the post-annealing at 900oC, the crystal structure and (100)-orientation of the films was maintained and the full width at half maximum (FWHM) of the Fe3Si 400 diffraction peak was decreased from 0.36o to 0.27o. The coercive field (Hc) was approximately 10 Oe and the saturation magnetization (Ms) was 900 emu/cm3, which are almost the same as those of bulk Fe3Si. From the XRD reciprocal space mapping measurement and the anisotropy constant (K1) of magnetization, the volume fraction of the long-range order phase (DO3 phase) in the as-deposited and post-annealed epitaxial Fe3Si films were estimated 50% and 100%, respectively. INTRODUCTION The performance of large-scale integrated circuits (LSIs) must be further improved to realize advanced information systems. However, the conventional approach of downsizing metal-oxide-semiconductor field-effect transistors (MOSFETs) to achieve high-speed operation with low power consumption is becoming more difficult due to physical limits. Therefore, a new approach for advanced devices is strongly required. A spin transistor is a promising candidate [1], and the integration of magnetism into semiconductor has been attracting much attention. Spin-polarized carrier injection from a ferromagnetic source into a semiconductor, or from ferromagnetic–insulator–semiconductor (MIS) structure is one of the hot topics in this field. The ferromagnetic silicide (Fe3Si) is attractive for Si-based spin transistor applications [2]. Because of the similarity of its crystal structure and the lattice constant of a=5.653Å [3], Fe3Si is expected to grow epitaxially on Si substrate. Moreover, from theoretical calculations [4], it has been shown that the DO3-type Fe3Si is fully spin-polarized at the Fermi level, i.e., is halfmetallic. In this paper, we succeeded in the epitaxial growth of Fe3Si thin films as ferromagnetic metal on (100) magnesia (MgO) substrates by RF-magnetron sputtering, and measured the ratio of DO3-phase in the epitaxial film. It is generally known that MgO films grow epitaxially on (100) Si substrates [5].
EXPERIMENT Ferromagnetic iron silicide (Fe3Si) films of 100 nm in thickness were deposited on (100) MgO single crystal by the co-sputtering of iron and silicon in argon atmosphere. A 2-inch iron disk with silicon tips was us
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