Epitaxial Growth of GaAs on 4-Inch Diameter Silicon Substrates by OMCVD.
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EPITAXIAL GROWTH OF GaAs ON 4-INCH DIAMETER SILICON SUBSTRATES BY OMCVD. Jack P. Salerno, J. W. Lee, Kopin Corporation, Taunton,
R. E. McCullough, MA 02780
and R.
P. Gale
ABSTRACT GaAs epitaxial layers grown on Si substrates up to 4 inches in diameter by OMCVD are characterized with respect to the materials parameters important for their application for device and circuit manufacturing. The layers are characterized using commercial flatness and surface quality measurement instrumentation, x-ray diffraction, Schottky diode characteristics, and photoluminescence. The 4-inch diameter GaAs epilayers are a single oriented phase and are of comparable quality to GaAs epilayers grown on smaller diameter Si substrates. INTRODUCTION Advances in GaAs on Si technology over the last several years have generated great interest in this engineered material structure. Various methods have been utilized to obtain reasonably high quality GaAs on Si epitaxial layers. These include vapor phase epitaxy (VPE) on Ge-coated Si substrates [1] as well as direct growth on Si substrates by molecular beam epitaxy (MBE) [2) and organometallic chemical vapor deposition (OMCVD) [3]. The quality of GaAs on Si wafers has advanced to the point where GaAs ring oscillators [4], 1K static RAMs (5], and monolithically integrated GaAs LEDs and Si MOSFETs [6] have been demonstrated. There are several potential applications for GaAs on Si ranging from GaAs integrated circuits (ICs) to monolithic integration of GaAs photonic and Si electronic devices. The current state of both GaAs on Si material quality and general GaAs IC technology indicate that GaAs on Si technology will initially be commercially applied toward improving the manufacturability of GaAs digital and analog ICs. The advantages of GaAs on Si for this application include increased wafer diameters reduced wafer breakage, uniformity of GaAs electronic properties, and the reduction of substrate costs for GaAs/AlGaAs epitaxial layers. In addition, residual impurity concentration and defect-impurity interactions may be substantially reduced in GaAs on Si relative to bulk GaAs. This commercial application requires the epitaxial growth of GaAs on Si substrates ranging from 3 to 6 inches in diameter in large quantities and with the reproducibility and uniformity necessary for high-yield manufacturing of GaAs ICs. The OMCVD growth technique is best suited to meet these requirements. Primary issues of concern are epilayer defect density and distribution, wafer flatness, surface smoothness, and uniformity of electronic properties. This paper reports on growth of GaAs on Si substrates up to 4 inches in diameter by OMCVD. While growth on 5-inch diameter Si has been reported (7), the present work concentrates on the characterization of these layers with respect to the materials parameters important for commercial utilization of GaAs on Si wafers for IC manufacturing. The 4-inch diameter GaAs epilayers are a single oriented phase and are of comparable quality to GaAs epilayers grown on smaller diameter Si
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