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MOLECULAR BEAM EPITAXIAL GROWTH OF InAs/AIGaAsSb DEEP QUANTUM WELLS ON GaAs SUBSTRATES. N. KUZE *, H. GOTO, S. MIYA, S. MURAMATSU, M. MATSUI, I. SHIBASAKI Central Laboratory, Asahi Chemical Ind., Co., Ltd., 2-1, Samejima, Fuji, Shizuoka, 416, Japan * [email protected] ABSTRACT We have investigated InAs deep quantum well structures (InAs DQWs) made from InAs/AlGaAsSb materials on GaAs substrates by molecular beam epitaxy (MBE). In the InAs DQWs, AlGaAsSb layers are lattice-matched to InAs. Using reflection high-energy electron diffraction (RHEED) linescan image analysis, we show that AlGaAsSb on GaAs surfaces quickly relaxes within 3 to 7 monolayers (MLs). The initial stages of AlxGaixAsSb (0.x_

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