Erbium Doped Silicon Single- and Multilayer Structures for LED and Laser Applications
- PDF / 541,624 Bytes
- 12 Pages / 612 x 792 pts (letter) Page_size
- 44 Downloads / 141 Views
V1.4.1
Erbium Doped Silicon Single- and Multilayer Structures for LED and Laser Applications Zakhary F. Krasilnik1, Boris A. Andreev1, Tom Gregorkiewicz2, Wolfgang Jantsch3, Mark A.J. Klik2, Denis I. Kryzhkov1, Ludmila V. Krasilnikova1, Viktor P. Kuznetsov1, Hanka Przybylinska4, Dmitry Yu. Remizov1, Vladimir G. Shengurov1, Viacheslav B. Shmagin1, Margarita V. Stepikhova1, Victor Yu. Timoshenko5, Nguyen Q. Vinh2, Artem N. Yablonskiy1, Denis M. Zhigunov5 1 Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, 603950 Russia 2 Van der Waals - Zeeman Institute, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam, The Netherlands 3 Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, A-4040, Linz-Auhof, Austria 4 Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, PL-02 668 Warszawa, Poland 5 Moscow State University, Physics Faculty, 119992 Moscow, Russia ABSTRACT The paper is a brief retrospective review of our contribution to the Si:Er problem in the last decade. It contains a description of the experimental facilities, results of the light emitting media (Si:Er and Si1-xGex:Er) research and device applications. INTRODUCTION The idea to use silicon as the host matrix for electrical and optical excitation of Er3+ ions embedded into it [1,2] proved rather fruitful in terms of solving the problems involved in silicon optoelectronics. The use of silicon as an intermediate medium transferring the excitation induced by the current or optical pumping to Er3+ ions has allowed a substantial increase of the excitation cross-section (up to 3·10-15 cm2 [3]), i.e., by 5-6 orders as compared with direct optical excitation of Er3+ embedded into a dielectric matrix (8·10-21 cm2 [4]). The progress in the development of Si:Er-based light-emitting devices with a higher power yield and quantum efficiency is associated with the improvement of the optically active media (increase of optically active Er3+ concentration, formation of optically active Er-containing complexes with higher excitation cross-section and minimization of Er3+ nonradiative relaxation processes) and optimization of the light emitting devices design. In this contribution we focus on both approaches: i) we report a new optically active Er-containing complex radiating at 1.54 µm, a novel mechanism of sub-band-gap photo-excitation of erbium in silicon; ii) show possibilities to enhance the power yield of electroluminescent light emitting devices (LEDs) including LEDs radiating at room temperature at reverse and forward bias of the p-n junction, demonstrate a novel long-term optical memory effect on the basis of Si:Er light emitting structure with the active Si:Er layer placed within the depletion region, discuss the perspectives and progress in the development of laser-type structures on Si:Er basis; iii) develop an original sublimation variant of the MBE technique (SMBE) and demonstrate its capabilities for realizing light-emitting devices effectively radiating up t
Data Loading...
