Erratum: Artificially nanostructured n-type SiGe bulk thermoelectrics through plasma enhanced growth of alloy nanopartic
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i: 10.1557/jmr.2011.117, Published by Cambridge University Press, 7 June 2011. In the last sentence of the abstract, “1000 °C” is incorrect: “A figure of merit of zT 5 0.5 1/- 0.09 at 450 °C and a peak zT of 0.8 1/- 0.15 at 1000 °C could be achieved for a nanostructured, 0.8% phosphorus-doped Si80Ge20 alloy without any further optimization.”
The correct temperature is 800 °C. REFERENCE N. Stein, N. Petermann, R. Theissmann, G. Schierning, R. Schmechel, and H. Wiggers: Artificially nanostructured n-type SiGe bulk thermoelectrics through plasma enhanced growth of alloy nanoparticles from the gas phase. J. Mater. Res. 26(15), 1872 (2011).
DOI: 10.1557/jmr.2011.311 J. Mater. Res., Vol. 26, No. 18, Sep 28, 2011
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Ó Materials Research Society 2011
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