Evidence for Shallow Acceptor Levels in MBE Grown GaN
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Internet Journal of Nitride Semiconductor Research:
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Evidence for Shallow Acceptor Levels in MBE Grown GaN B. G. Ren, J. W. Orton, T. S. Cheng, D. J. Dewsnip, D. E. Lacklison, C. T. Foxon, C. H. Malloy and X. Chen MRS Internet Journal of Nitride Semiconductor Research / Volume 1 / January 1996 DOI: 10.1557/S1092578300001940, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300001940 How to cite this article: B. G. Ren, J. W. Orton, T. S. Cheng, D. J. Dewsnip, D. E. Lacklison, C. T. Foxon, C. H. Malloy and X. Chen (1996). Evidence for Shallow Acceptor Levels in MBE Grown GaN . MRS Internet Journal of Nitride Semiconductor Research, 1, pp e22 doi:10.1557/ S1092578300001940 Request Permissions : Click here
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Internet Journal o f
Nitride S emiconductor Research
Volume 1, Article 22
Evidence for Shallow Acceptor Levels in MBE Grown GaN B. G. Ren Department of Electrical and Electronic Engineering, University of Nottingham and Department of Physics, University of Nottingham J. W. Orton Department of Electrical and Electronic Engineering, University of Nottingham T. S. Cheng Department of Physics, University of Nottingham D. J. Dewsnip, D. E. Lacklison Department of Electrical and Electronic Engineering, University of Nottingham C. T. Foxon Department of Physics, University of Nottingham C. H. Malloy, X. Chen Department of Physics and Astronomy, University of Wales This article was received on June 3, 1996 and accepted on October 24, 1996.
Abstract We report the results of photoluminescence measurements on a number of GaN thin films grown by MBE on GaAs (111)B substrates. In particular, we draw attention to a new observation of a line at approximately 3.40eV which is accompanied by complex fine structure and interpret it as due to a donor-acceptor (DA) transition. Assuming a donor energy of 30meV, we derive an acceptor binding energy of approximately 80meV which is very much smaller than the accepted value of 250meV for the well established Mg acceptor. However, our result is in agreement with a recent estimate of the hydrogenic acceptor energy as being 85meV.
1. Introduction The importance of GaN for practical optoelectronic devices made a quantum leap forward with the demonstration of successful p-type doping with Mg acceptors [1]. As is now well known, this led to the development of highly efficient visible LEDs [2] and more recently to the first realisation of injection laser diodes, operating at room temperature [3]. As a result, the AlGaInN material system is now seen as a major challenger to the wide gap II-VI compounds in the race to produce a viable short wavelength laser for optical disc read-out systems. However, it is interesting to note that a serious problem for both materials concerns the large ionisation energies of the commonly used acceptors
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