Evolution of Sputtered HfO 2 Thin Films Upon Annealing
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Evolution of Sputtered HfO2 Thin Films Upon Annealing
S. Nam, S. W. Nam, J. H. Yoo and D. -H. Ko Dept of Ceramic Eng., Yonsei Univ, Seoul, Korea, Ja-Hum Ku and Siyoung Choi R&D Center Semiconductor Samsung Electronics Co. San #24, Nongseo-Lee, Kiheung-Eup, Yongin-City, Kyungki-Do, Korea
ABSTRACT We investigated the evolution of the physical and electrical properties of HfO2 thin films deposited by the reactive DC magnetron sputtering method on the (100) silicon substrate upon annealing. The HfO2 thin films deposited at room temperature were amorphous, while the films after annealing were poly crystalline. The crystallization temperature of the HfO2 thin films was dependent on the annealing methods (RTP or Furnace) and ambient (nitrogen or oxygen). The microstructures of HfO2 thin gate oxides of Tox
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