Fabrication and Electrical Properties of Metal/Double-Insulator/Metal Diode
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1108-A09-11
Fabrication and Electrical Properties of Metal/Double-Insulator/Metal Diode K. N. Choi1, J.W. Park2, H. S. Lee2, K. S. Chung1 1 2
Department of Electronic Engineering, KyungHee University, Gyeonggi-Do 449-701, Korea Department of Physics, KyungHee University, Gyeonggi-Do 449-701, Korea
ABSTRACT We have fabricated two metal/double insulator/metal diodes using a sputtering system and atomic layer deposition. Here, we show metal/double insulator/metal diode applied as a switch element. The diode exhibits good rectifying characteristics at room temperature. We used the electrode material with Pt and insulators were HfO2/ZrO2 and NiO/ZnO each. The devices were fabricated using the lithographic system and top electrode sizes were 30 µm x30 µm. The double insulator diode produces an enhanced nonlinearity by incorporating two adjacent oxides instead of the single oxide layer of the MIM diode. In the double insulator diode the mode of tunneling under positive applied biases can be made different from that under negative applied biases resulting in improved asymmetry. INTRODUCTION Silicon based transistor have been the most popularly used switch element. However, silicon based transistor do not conform to high density, nonvolatile memories with three dimensional(3D) stack structures due to their high processing temperatures and the difficulty of growing high quality epitaxial silicon over metals. MIM (Metal Insulator Metal) diodes may provide a suitable rectifying element. MIM diodes are rectifying electron devices made out of metals and insulators [1-3]. The advantage of the MIM diode over semiconductor rectifiers is its extremely fast response time and wide bandwidth. These attributes make possible the promise of higher speed detection and mixing of optical radiation. Despite this conceptual simplicity fabricating functional and reliable MIM diodes is challenging. However, MIM diodes show less asymmetry and nonlinearity than desired. We would like a diode with increased asymmetry for linear rectification and increased nonlinearity. Most MIM diodes follow Fowler-Nordheim and direct tunneling mechanisms [4-5]. Moreover, a third possibility is resonant tunneling [6]. Increased asymmetry may be achieved by making the electrons traverse the oxide by resonant tunneling under one polarity of bias and standard tunneling under the other polarity. This
situation can be realized by using a multilayer structure between the electrodes instead of the single oxide layer.
EXPERIMENTAL DETAILS NiO/ZnO films were deposited 10 nm and 30 nm thicknesses each using RF Magnetron sputtering system onto Pt deposited SiO2 substrate. The deposition pressure during sputtering was maintained at 5mTorr, and the base pressure was kept at ~10-6 Torr. Then top electrode Pt was deposited by DC sputter. HfO2 and ZrO2 films were fabricated through atomic layer deposition (ALD). Terarkis (dimethlylamido) hafnium (Hf(NM2)4) was used as a precursor of Hafnium and terakis (dimethlylamido) zirconium (Zr(NM2)4) was also used as a precursor of Zirc
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