Electrical characterization of CdZnTe/Si diode structure
- PDF / 2,484,341 Bytes
- 7 Pages / 595.276 x 790.866 pts Page_size
- 91 Downloads / 249 Views
Electrical characterization of CdZnTe/Si diode structure C. Dogru Balbasi1,2 · M. Terlemezoglu3,1,2 · H. H. Gullu4 · D. E. Yildiz5 · M. Parlak1,2 Received: 20 March 2020 / Accepted: 28 June 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Temperature-dependent current-voltage (I − V) , and frequency dependent capacitance-voltage (C − V) and conductancevoltage (G − V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. Obtained profiles enable us to understand the different characteristics of the diode structure such as the carrier conduction mechanism and the nature of the interfacial layer. Over the temperature range between 220 and(340 K, taking consideration of the disparity in ) the forward-biased current, the diode parameters such as saturation current I0 , zero-bias barrier height ( ΦB0 ) and ideality factor (n) have been obtained. The barrier height increased (0.53 to 0.80 eV) while the ideality factor decreased (4.63 to 2.79) with increasing temperature from 220 to 340 K, indicating an improvement in the junction characteristics at high temperatures. Due to the inhomogeneity in barrier height, the conduction mechanism was investigated by Gaussian distribution analysis. Hence, the mean zero-bias barrier height ( ΦB0 ) and zero-bias standard deviation ( 𝜎0 ) were calculated as 1.31 eV and 0.18, respectively. Moreover, for holes in p-type Si, Richardson constant was found to be 32.09 A cm−2 K−2 via modified Richardson plot. Using the capacitance-voltage (C − V) and conductance-voltage (G − V) characteristics, series resistance (Rs ) and density of interfacial traps (Dit ) have been also investigated in detail. A decreasing trend for Rs and Dit profiles with increasing frequency was observed due to the impurities at the CdZnTe/Si interface and interfacial layer between the front metal contact and CdZnTe film. Keywords CdZnTe · Thin film · Interface traps · Transport mechanism · Gaussian distribution
1 Introduction Cadmium Zinc Telluride (CdZnTe) is a ternary II-VI semiconductor material with a high atomic number which provides strong absorption [1, 2]. It also has excellent optoelectronic properties and low leakage current due to its wide bandgap properties. CdZnTe is used in many important applications, such as solar cells [3], photodiodes [4], * H. H. Gullu [email protected]; [email protected] 1
Department of Physics, Middle East Technical University (METU), Ankara 06800, Turkey
2
Center for Solar Energy Research and Applications (GUNAM), METU, Ankara 06800, Turkey
3
Department of Physics, Tekirdağ Namık Kemal University, 59030 Tekirdag, Turkey
4
Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara, Turkey
5
Department of Physics, Hitit University, 19030 Çorum, Turkey
photoconductors [5], room temperature gamma-ray [6], X-ray detectors [7], infrared windows [8] and light-emitting diodes [9]. In this study, a detailed analysis of electrical properties of the CdZnTe/Si structure has
Data Loading...
