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MRS Advances © 2019 Materials Research Society DOI: 10.1557/adv.2019.15

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Toyo Aluminium K.K., 341-14 Higashiyama, Ohtani, Hino-Cho, Gamo-Gun, Shiga 529-1608, Japan

2

Graduate School of Engineering, Nagoya University, Furocho, Chikusa-ku, 464-8603, Nagoya, Japan

Abstract

The impact of the Al and Ge ratio in the Al-Ge pastes are investigated for fabricating the singlecrystalline Si1-xGex thick layers on large area Si substrates by screen-printing metallization process. From X-ray reciprocal space maps, Ge fraction in the fabricated Si1-xGex thick layers are found to increase up to 40% with increasing the Ge ratio in the Al-Ge pastes. On the other hand, the interface of the Si and Si1-xGex layers are getting winding with increasing the Ge ratio in the Al-Ge pastes. The Al-Si-Ge phase diagram indicated that uniform SiGe layer can be fabricated by adjusting the Al-Ge ratio in the pastes within the liquid phase region.

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