Fabrication of side-illuminated p-i-n Photodiode with waveguide layers
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Fabrication of side-illuminated p-i-n Photodiode with waveguide layers Byungok Jeon , Seungkee Yang, Hwayoung Kang, Doyoung Rhee, Telecommunication R&D center, Samsung Electronics Co., LTD 416, Maetan-3Dong, Paldal-Gu, Suwon City, Gyeunggi-Do, KOREA TEL:+82-31-279-5732, FAX:+82-31-279-5639, E-mail: [email protected]
ABSTRACT
We present the fabrication of side-illuminated p-i-n photodiode. This is suitable for passive integration on the planar lightwave circuit (PLC), which is able to make the low-cost packages. Epitaxial structures have two main layers, diode layer and waveguide layer. It was determined by beam propagation method (BPM) simulation. To get a high responsivity and reliability, each layer must be etched. The alignment tolerances were tested. We carried out some experiments on various methods and several devices were satisfactory for the optical communication system at 1.3- and 1.55 micrometer wavelengths.
INTRODUCTION
The side-illuminated photodiodes (PD) have been given the attention because it allows for overcoming the well-known compromise between responsivity and cutoff frequency [1], [2]. Actually high frequency photodiodes have been demonstrated by several groups [3]-[6]. Their products, however, have some weak point in the packaging issue; core thickness is very small. It makes the alignment between a fibre and a device very difficult, which is the cause that increases the packaging cost. Therefore, from a commercial point of view, the photodiodes, which have the thin core thickness, are not available to the low cost devices. For several years, the engineers in the fields of the fabrication have not acceded to the packaging engineer’s demands. They needed the photodiodes that have large coupling tolerance enables passively to align and surface mountable structure for flip-chip bonding. A few years ago L. Giraudet et al. demonstrated an appropriate photodiode that meets the demands [7], [8]. In order to proceed from their work and get larger coupling tolerance, we have made some experiments and report.
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SIMULATION
The epitaxial structure proposed by L. Giraudet et al is similar to the one in Fig. 1 [7]. It has various layers, each of which plays an important role in terms of absorbing and propagating of light. The incident light from the PLC steps in its waveguide layer that consists of the InP and InGaAsP layers. Owing to the various thickness and the refractive index, the incident light propagates to the upper layer (evanescent coupling) and finally to the photodiode layer composed with InGaAs and Zn-diffused layer. The reponsivity and internal quantum efficiency is closely related to the waveguide layer structure; the number of layers and thickness. Beam Propagation Methods (BPM) let us know those. A thicker waveguide structure than the one that proposed by L. Giraudet et al is needed because of the platform design of PLC. The appropriate structures that were simulated by BPM are listed in Table I. The number and the thickness of InP and InGaAsP layers are restricted by e
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