Fabrication, Transport and Raman Studies of Pulsed Laser Deposited Al/Ga Doped PBCO Thin Films
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1222-DD05-16
Deposition profile control of carbon films on patterned substrates using a hydrogenassisted plasma CVD method Takuya Nomura1, Kazunori Koga1, 4, Masaharu Shiratani1, 4, Yuichi Setsuhara2, 4, Makoto Sekine3, 4, Masaru Hori3, 4 1 Department of Electronics, Kyushu University, Fukuoka, Japan. 2 JWRI, Osaka University, Ibaraki, Osaka, Japan. 3 Dept. of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi, Japan. 4 JST CREST, Tokyo, Japan.
ABSTRACT We have studied effects of H atom source on deposition profiles of carbon films, deposited by H assisted anisotropic plasma CVD method. Deposition rate normalized by that for the aspect ratio of 1 at sidewall and bottom decreases with increasing discharge power of H atom source from 0 W to 500 W, because the incident H atom flux per surface area in a trench increases and H atoms etch carbon films.
INTRODUCTION Diamond-like carbon (DLC) films is a term used to describe a variety of carbon based materials with attractive properties, such as a high mechanical hardness, chemical inertness, optical transparency and wide band gap [1-5]. DLC films have widespread applications as protective coatings in several areas such as car parts, biomedical coatings and microelectromechanical systems (MEMS). Deposition profile of the DLC and a-C:H films in trenches is one of the concerns to realize coatings on patterned substrates. Recently, we have studied deposition profile of plasma CVD Cu films in trenches for nano-fabrications [6-14]. We have succeeded in controlling deposition profile of Cu in trenches, and have realized sub-conformal, conformal and anisotropic deposition, for which Cu is filled preferentially from the bottom of trenches without sidewall deposition, using H-assisted plasma CVD method [6-14]. Irradiation of H atoms on the Cu films surface removes impurities in films and enhances the deposition rate. We are applying the method to plasma CVD carbon films, control their deposition profiles. Here, we report dependence of deposition profiles of plasma CVD carbon films in trenches on discharge power of H atom source and on aspect ratio. EXPERIMENTAL Experiments were performed using the H-assisted plasma CVD reactor, in which a capacitively-coupled main discharge and an inductive-coupled discharge for an H atom source were sustained as shown in Fig. 1 This reactor provided independent control of generation rates of deposition radicals and H atoms. For the main discharge, a mesh powered electrode of 85 mm in diameter and a plane substrate electrode of 85 mm in diameter were placed at a distance of 33 mm. The discharge of H atom source was sustained with an rf induction coil of 100 mm in
diameter placed at 65 mm above the substrate electrode of the main discharge. The excitation frequency of the main discharge was 28 MHz and the supplied power P m was below 45 W. An rf bias voltage of 400 kHz was applied to the substrate to control kinetic energy of ions incident on it. The supplied power Pbias was 0-5 W. Toluene diluted with H2 and Ar was su
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