Facile synthesis of Cu-In-Zn-S alloy nanospheres for fast photoelectric detection across the visible spectrum
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RESEARCH ARTICLE
Facile synthesis of Cu–In–Zn–S alloy nanospheres for fast photoelectric detection across the visible spectrum Yang SHENG1,2,4*, Jie YANG3*, Qiliang ZHU1, Yixin SUN1, Rong ZHANG1, and Xiaosheng TANG (✉)3 1 Jiangsu Key Laboratory of Environmentally Friendly Polymeric Materials, School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China 2 Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211800, China 3 Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China 4 Jiangsu Chenguang Paint Co., Ltd., Changzhou 213154, China
© Higher Education Press 2020
ABSTRACT: Fast and broadband photoelectric detection is a key process to many photoelectronic applications, during which the semiconductor light absorber plays a critical role. In this report, we prepared Cu-In-Zn-S (CIZS) nanospheres with different compositions via a facile hydrothermal method. These nanospheres were ~200 nm in size and comprised of many small nanocrystals. A photodetector responded to the visible spectrum was demonstrated by spraying the solution processed nanospheres onto gold interdigital electrodes. The photoelectric characterization of these devices revealed that CIZS nanospheres with low molar ratio of n(Cu)/n(In) exhibited improved photoelectric response compared to those with high n(Cu)/n(In), which was attributed to the reduced defects. The relatively large switching ratio (Ion/Ioff), fast response and wide spectral coverage of the CIZS-based photodetector render it a promising potential candidate for photoelectronic applications. KEYWORDS: detection
chalcogenides; Cu–In–Zn–S nanospheres; solvothermal; photoelectric
Contents 1 Introduction 2 Materials and methods 2.1 Synthesis of CIZS nanospheres 2.2 Fabrication of CIZS-based photodetectors 2.3 Characterization 3 Results and discussion
Received May 12, 2020; accepted July 3, 2020 E-mail: [email protected] *
Y.S. and J.Y. contributed equally to this work.
4 Conclusions Dislosure of potential conflicts of interests Acknowledgements References Supplementary information
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Introduction
Photodetectors with photoelectric conversion capability have received increasing interest in both academic and industrial fields for a wide variety of applications including sensing, imaging and optical communications [1–3]. The semiconductor material is essential to photodetectors as it
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Front. Mater. Sci.
converses optical signal to electrical signal under the applied electric field [4]. However, the manufacturing of traditional Si-, GaN- and InGaAs-based photodetectors is complex and expensive. In addition, the high driving voltage of traditional photodetectors also restricts their wide-spread adoption [5]. Therefore it is urgent and challenging to fabricate photodetectors working on low voltage with fast and broadband response via a simple and inexpensive process. In recent years, colloidal semiconductors produced via the solut
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