Field Induced Dielectric Properties of 0.7Pb(Mg 1/3 Nb 2/3 )O 3 -0.3PbTiO 3 Thin Films

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U14.11.1

Field Induced Dielectric Properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 Thin Films Apurba Laha, S. Saha 1 and, S. B. Krupanidhi Materials Research Centre, Indian Institute of Science, Bangalore -560 012, INDIA 1 Materials Science Division Argonne National Laboratory, 9700, S. Cass Avenue, Argonne, IL-60439, USA

ABSTRACT DC electric field induced dielectric properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMNPT) thin films were studied as a function of frequency at different temperatures. It was observed that the dielectric constant (ε) and dissipation factor (tanδ) were decreased in presence of bias field. The temperature of dielectric maxima was found to increase with increasing bias level. The low temperature (