Film Properties of High-Performance FSG Films

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Film Properties of High-Performance FSG films T.Yoda 1, H.Miyajima , K.Fujita , R.Nakata , Y.Nishiyama Advanced ULSI Process Engineering Department Toshiba Corporation, Semiconductor Company, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan 1

ABSTRACT An advanced FSG film of k=3.4 was developed, which exhibited excellent resistance for moisture absorption. Physical and chemical properties of this advanced FSG film were compared by typical FSG films deposited in both high density plasma (HDP) and PE-CVD reactors, for the same k value.  The advanced FSG film appears to be superior to the HDP-FSG film by a wide margin in the following tests. The moisture absorption rate by TDS (after 4 days of air exposure) is about 5 times lower, the hardness was 1.8 times more, and the hygroscopicity (after 1 hr. boiling) was 2.6 times lower. We conclude that these differences are mainly due to the unique film structure of the advanced FSG film. INTRODUCTION

 FSG films are widely used not only Al based interconnect technology but also Cu/Damascene technology. Numerous FSG studies describe the film quality deposited by SiH4 based PE-CVD [1, 2, 3] and TEOS based PE-CVD [4, 5], in which the k-value of these studies is about 3.6-3.8.    The comparison of FSG films characterizations deposited using wide variety of manufacturing processes employing PE-CVD and HDP-CVD has also been investigated [6].  Recent study has shown the process requirements and yields issues for Cu/FSG (k ≤3.65) integration at 6 levels, and concluded that PE-CVD FSG films absorbed more water than HDP film [7].  However these k-values cannot satisfy the requirement to improve circuit performance. While the k-value is said to be linearly related to the in-film fluorine concentration, excess fluorine atoms can attack Al and Cu wiring to cause resistance changes, poor adhesion to SiN and TaN, and also reliability problems. We report that FSG film, which meets the k-value requirement (k