Photoresponse properties of CdSe thin film photodetector
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Photoresponse properties of CdSe thin film photodetector Nitin T. Shelke1,4 · S. C. Karle2 · B. R. Karche3 Received: 9 April 2020 / Accepted: 22 July 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract In the present investigation, the performance of highly sensitive photodetector based on CdSe thin film has been demonstrated. The cadmium selenide (CdSe) films were deposited successfully by spray pyrolysis method on glass substrate. The as-deposited films were used as visible light detector. Further, the structural, morphological, and optical properties of CdSe films were investigated through X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy, and optical absorption spectrophotometer. The XRD studies show that the produced samples are polycrystalline in nature. A UV–Visible absorbance spectrum indicates direct allowed transition with bandgap about 1.75 eV. The SEM micrographs depict uniformly distributed well defined uneven hexagonal grains. The CdSe film-based photodetector exhibits high responsivity, detectivity and shows an ultrafast photoresponse. The excellent photoresponse and high photosensitivity of CdSe film makes it a strong candidate for high-performance photodetectors.
1 Introduction In recent years, the functional materials such as wide bandgap semiconductors found to have specific electric and optoelectronic properties at nanoscale which plays a vital role in fields of photonics, nanoelectronics, and optoelectronics. Among all, the nanostructured materials have stimulated tremendous attentions because of their novel thermoelectric properties and photovoltaic properties [1–4]. Since past two decades, number of attempts has been devoted to investigate the novel properties of semiconductor materials at nanoscale dimension. As one of the most studied property, the photosensitivity is most important aspect of semiconductor nanostructures. The semiconductor nanostructures have shown a great potential as photosensitive elements due to * Nitin T. Shelke [email protected] 1
Department of Physics, Vidya Pratishthan’s Kamalnayan Bajaj Institute of Engineering and Technology, Baramati, Maharashtra 413133, India
2
Department of Electronic Science, New Arts Commerce and Science College, Ahmednagar, Maharashtra 414001, India
3
Thin Film and Materials Research Laboratory, Department of Physics, Shankarrao Mohite Mahavidyalaya, Akluj, Solapur, Maharashtra 413216, India
4
Physical & Materials Chemistry Division, CSIR – National Chemical Laboratory, Pune, Maharashtra 411008, India
their extraordinary properties such as wideband response and quick response time which open up several new avenues for photosensitive devices [5, 6]. The semiconducting materials absorb the incident photons which increase number of free charge carriers led to increase in its conductivity, known as photoconductivity. This interesting phenomenon of photoconductivity is applicable in various growing fields like biological sensing, photovoltaics, and ph
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