Flexible and high-performance broadband nanoflowers tin sulfide photodetector
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Flexible and high‑performance broadband nanoflowers tin sulfide photodetector Mohamed S. Mahdi1,2 · Husam S. Al‑Arab1 · Kamal H. Latif1 · K. Ibrahim2 · M. Bououdina3 Received: 9 May 2020 / Accepted: 11 November 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract A significant prerequisite for the development of a high-performance photodetector remains its low dark current value, because it promotes sensitivity and signal-to-noise ratio, in addition to low detectability light power density. Nevertheless, the fabricated photodetectors, which are based on deposited tin sulfide (SnS) films onto a flexible (PET at pH 5) and glass substrates, exhibited relatively high dark current values around (0.2 µA) and (several µA), respectively. This study proposes a novel approach for a better control of the photoresponse characteristics of nanostructured SnS film which resulted from reducing the deposition growth rate by adjusting the pH of the reaction solution to 5.8. The film was deposited onto a flexible substrate of polyethylene terephthalate (PET) using an inexpensive chemical bath deposition method. The as-fabricated photodetector exhibited a low dark current value approximately (~ 24 nA) at 5 V bias voltage and a good response in a broad range covering the UV up to the near-infrared. Besides, light-emitting diodes (380, 530, 750, and 850 nm) were used to investigate the photoresponse characteristics of the photodetector. The latter manifested fast photoresponse times (rise and decay) and good sensitivity for all used illumination wavelengths. Furthermore, under various illumination power densities of 850 nm, the photocurrent manifested a good dependence upon power density. Based on the obtained excellent photoresponse characteristics, this photodetector is promising for the photoelectronic flexible device in the UV–Vis–NIR range. Keywords Flexible · Broadband · Photodetector · Nanoflowers · SnS
1 Introduction Recently, extensive efforts have been carried out to synthesize and characterize nanomaterial semiconductors because of their exceptional and significant features along with their performance in various gas and light-sensing applications [1]. The fabricated photodetectors based on these semiconductors have also been used in industrial applications such as broad spectral switches, environment monitoring, and image and chemical/biological sensing [2–5]. The progress in lightsensing devices that cover a wide spectral response, including ultraviolet, visible, and near-infrared (UV–Vis–NIR), * Husam S. Al‑Arab [email protected] 1
Directorate of Renewable Energy, Ministry of Science and Technology, Baghdad, Iraq
2
School of Physics, Universiti Sains Malaysia, Penang, Malaysia
3
Department of Physics, College of Science, University of Bahrain, Zallaq, Kingdom of Bahrain
is desirable [3]. In addition, nanostructured materials such as (SnS), are environmentally benign and gather particular interest in the progress of photodetector and photovoltaic devices manifested by the relati
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