Formation and characterization of the CuIn(S,Se) 2 /buffer layer interface in electrodeposited solar cells
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F14.27.1
Formation and characterization of the CuIn(S,Se)2/buffer layer interface in electrodeposited solar cells N. Naghavi1, C. Hubert1, O. Roussel1, L. Sapin1, M. Lamirand1, J. F. Guillemoles1, D. Lincot1,2, J. Kessler1 and O. Kerrec1 1 Iinstitut de Recherche et Developpement sur l’Energie Photovoltaique (IRDEP) UMR 7174, EDF-CNRS-ENSCP, 6 quai Watier, BP 49, 78401 Chatou Cedex, France 2 Laboratoire d’Electrochimie et de Chimie Analytique (LECA) UMR 7575, CNRS-ENSCP, 11 rue Pierre et Marie Curie, 75231 Paris Cedex, France
ABSTRACT This paper presents the influence of the solution chemistry of chemical bath deposition (pH and complexing agents) on the performance of CuIn(S,Se)2 cells after an initial CN- treatment. It is shown that it is possible to modify the deposition conditions of the CdS by increasing the pH of the solution and by replacing the complexing agent (ammonia) by citrate ions. Both NH3 based and citrate based process give very homogenous and covering thin films. However, in the case of the citrate based process a decrease of open circuit voltage (Voc) and fill factor (FF) and thus of the cell efficiencies is observed. This points out that the main role of the buffer layer is not only related to the specific properties of the CdS itself but also to the near surface modifications of the CuIn(S,Se)2 caused by the presence of the complexing agent in the bath.
INTRODUCTION Chalcopyrite compounds of the family Cu(In,Ga)(Se,S)2 have led to the highest laboratory efficiencies for thin film solar cells (19.2%) [1] and their modules have been successfully produced on an industrial scale [2-4]. However, the market share of these devices is still very small (
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