Formation of Multilayered Nanostructures of N V Sites in Single-Crystal CVD Diamond

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ion of Multilayered Nanostructures of NV Sites in Single-Crystal CVD Diamond A. M. Gorbacheva*, M. A. Lobaeva, D. B. Radishcheva, A. L. Vikhareva, S. A. Bogdanova, S. V. Bol’shedvorskiia,b, A. I. Zeleneevb,c, V. V. Soshenkoa,b, A. V. Akimovb,d, M. N. Drozdove, and V. A. Isaeva a

Federal Research Center Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, 603950 Russia b Lebedev Physical Institute, Russian Academy of Sciences, Moscow, 119991 Russia c Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, 140180 Russia d Russian Quantum Center, Moscow, 121205 Russia e Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950 Russia *e-mail: [email protected] Received March 20, 2020; revised March 20, 2020; accepted April 1, 2020

Abstract—The results of growing multilayered nitrogen-doped nanostructures that have the form of periodically arranged nanometer-thick nitrogen-containing layers in a single-crystal CVD diamond are presented. The possibility of creating nitrogen-doped diamond layers with extremely sharp boundaries (less than 1 nm) is demonstrated. The photoluminescence study have shown that multilayered structures make it possible to obtain a higher radiation intensity of practically important NV – sites at a spin coherence time close to that for uniformly doped layers with the same concentration of nitrogen. Keywords: NV sites in diamond, chemical vapor deposition growth of diamond, photoluminescence, doped diamond. DOI: 10.1134/S1063785020070093

Nitrogen–vacancy (NV) coloring sites in diamond have a number of unique properties, which makes them attractive for a number of applications, for example, for the use in biocompatible temperature sensors and highly sensitive magnetometers with high spatial resolution, as well as for quantum information processing [1, 2]. During the chemical vapor deposition (CVD) synthesis of a diamond, NV sites are formed during its growth as a result of nitrogen addition to the working gas mixture, which is usually comprised of hydrogen with a small amount of methane [1]. Earlier, we have studied in detail the dependence of the embeddability of nitrogen into a single-crystal diamond in the process of its CVD synthesis on various parameters, such as the pressure of the gas mixture, the concentrations of nitrogen and methane in the mixture, the temperature of the substrate, and the angle of misorientation of the substrate surface [3, 4]. The obtained data make it possible to create nanoscale structures from the nanosized nitrogen-doped layers (delta layers) in the volume of a single-crystal diamond. Such structures containing NV sites with spatial arrangement defined with nanometer accuracy can be used as sensors in magnetometry. The aim of this work was to demonstrate the feasibility of the devel-

oped technology for the formation of structures comprised of several thin doped layers and to study the photoluminescence of NV sites in such structures. A diamond doped with