Formation of Nanometric Yttrium Silicides Layers onto Si (111) Substrate by Ion Implantation
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ORIGINAL PAPER
Formation of Nanometric Yttrium Silicides Layers onto Si (111) Substrate by Ion Implantation H. Fiad 1 & R. Ayache 1,2 & A. Bouabellou 1 & C. Sedrati 3 Received: 26 June 2020 / Accepted: 5 October 2020 # Springer Nature B.V. 2020
Abstract Nanometric YSi2 − x yttrium silicides layers have been formed onto a Si(111) single-crystal substrate by implantation at room temperature (RT) of Y ions using an energy of 195 keV and a dose of 2 × 1017 Y+/cm2 followed by a thermal annealing in a nitrogen atmosphere. The process of the silicidation has been investigated at a function of the annealing temperatures ranging from 600 to 1000 °C for duration of one hour. The characterization of the samples has been performed using X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), and scanning electron microscopy combined with energy dispersive Xray spectrometer (SEM-EDS) techniques. Studies have shown that the YSi2 − x layer is epitaxially grown on the Si (111) surface, and after thermal annealing at a temperature of 600–1000 °C, no change in the properties of the formed phase is found. Keywords Yttrium silicide . Ion implantation . RBS
1 Introduction Rare earth (RE) and transition metal silicides grown on Si(111) substrates have attracted recently a great attention for their technological potential applications in microelectronic devices [1–4]. Indeed, the interfaces of RE silicides with Si(111) have very small lattice mismatches [5], sharp interfaces, and low Schottky barrier heights [6, 7], making them ideal materials in many devices, such as infrared detectors and rectifying contacts [8]. It is established that on p-type silicon substrates the Yttrium silicide is a good choice to produce low Schottky barrier height [9]. In addition, the comparatively low resistivity of the established (YSi2 − x), It is essential to reduce the requirements of MOS devices parasitic resistance [10]. Epitaxial YSi2 − x films can be fabricated on Si by solid phase reaction followed by annealing [1, 10]. The development of optimal techniques to fabricate high-quality epitaxial YSi2 − x
* C. Sedrati [email protected] 1
Thin Films and Interfaces Laboratory, University of Frères Mentouri Constantine 1, Constantine 25000, Algeria
2
Pharmacy Department, University of Batna 2, Batna 05000, Algeria
3
Mechanics and Advanced Materials Laboratory, Ecole Nationale Polytechnique de Constantine - Malek BENNABI- Constantine, El Khroub, Algeria
films has attracted actually much attention. Ion beam synthesis (IBS) is the most promising technique to synthesize nanometricYSi2 − x films with a high degree of crystallinity as the used dose and energy of the implanted metal atoms are easily controlled [11]. In a previous paper [12], which has concerned conditions affecting the growth of YSi2 − x epitaxial layers on Si (111), it was reported that ion implantation was carried out at 500 ° C, and the results have shown that the yttrium silicide layer was grown on the Si(111) substrate with epitaxial relationship. In this pape
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