Formation of Stacking Fault Tetrahedra during Epitaxial Growth of Silicon and Germanium-Silicon Layers on (111) Silicon | IBOOK.PUB

Formation of Stacking Fault Tetrahedra during Epitaxial Growth of Silicon and Germanium-Silicon Layers on (111) Silicon

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Mat. Res. Soc. Symp. Proc. Vol. 54. ' 1986 Materials Research Society

274

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