Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
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Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia Markus Kamp, M. Mayer, A. Pelzmann and K. J. Ebeling MRS Internet Journal of Nitride Semiconductor Research / Volume 2 / January 1997 DOI: 10.1557/S1092578300001526, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300001526 How to cite this article: Markus Kamp, M. Mayer, A. Pelzmann and K. J. Ebeling (1997). Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia . MRS Internet Journal of Nitride Semiconductor Research, 2, pp e26 doi:10.1557/S1092578300001526 Request Permissions : Click here
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M R S
Internet Journal o f
Nitride S emiconductor Research
Volume 2, Article 26
Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia Markus Kamp , M. Mayer, A. Pelzmann, K. J. Ebeling Abteilung Optoelektronik, Universität Ulm This invited article was received on May 30, 1997 and accepted on September 11, 1997.
Abstract Ammonia is investigated as nitrogen precursor for molecular beam epitaxy of group III nitrides. With the particular on-surface cracking approach, NH3 is dissociated directly on the growing surface. By this technique, molecular beam epitaxy becomes a serious competitor to metal organic vapor phase epitaxy. Thermodynamic calculations as well as experimental results reveal insights into the growth mechanisms and its differences to the conventional plasma approach. With this knowledge, homoepitaxially GaN can be grown with record linewidths of 0.5 meV in photoluminescence (4 K). GaN layers on c-plane sapphire also reveal reasonable material properties (photoluminescence linewidth 5 meV, n ≈ 1017 cm-3, µ ≈ 220 cm2/Vs). Beside GaN growth, p- and n-doping of GaN as well as the growth of ternary nitrides are discussed. Using the presented ammonia approach UV-LEDs emitting at 370 nm with linewidths as narrow as 12 nm have been achieved.
1. Introduction GaN based semiconductors, over the last couple of years, developed from basic scientific research into a tremendous commercial market. As a key technology for full color displays and high temperature electronics, GaN needs no further introduction to motivate research in this field. Today, the growth of GaN and its related compounds is dominated by metal organic vapor phase epitaxy (MOVPE) [1] [2], a technique with an obvious advantage in fields where high throughput is required, e.g. for mass product such as light-emitting diodes (LEDs). However, even the quality of GaN layers grown by MBE is in many terms inferior to the best MOVPE results reported today. Therefore, the potential advantages of the MBE approach, well regarded from many other III-V semicondu
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