Epitaxial Growth of High Quality InSb film on Si Substrate by MBE, and Their Device Properties
- PDF / 143,899 Bytes
- 6 Pages / 612 x 792 pts (letter) Page_size
- 63 Downloads / 220 Views
1194-A09-02
Epitaxial Growth of High Quality InSb film on Si Substrate by MBE, and Their Device Properties Yoshihisa Kunimi, Hiromi Fujita, Ayano Sakurai, Shinichiro Akiyama, Masatoshi Miyahara, Yoshihiko SHIBATA Magnetic Sensor Process Technology & Development Dept., Asahi-KASEI Microdevices Corporation. 2-1 Samejima, Fuji-city, Shizuoka, 416-8501, JAPAN ABSTRACT High crystallized thin InSb epitaxial growth directly on Si substrate was investigated by molecular-beam epitaxy (MBE). Experimental results indicated that suppressing the desorption of hydrogen atoms which terminated the dangling bonds of Si wafer surface and incorporation of As around the interface between film and Si substrate were the most important to obtained high crystallized InSb film. It could be achieved by the irradiation of As4 cluster beam onto the Si wafer just before film growth. Obtained thin InSb film showed mirror like surface, and its thickness was 0.7 µm. Its electron mobility was 47,600 cm2/V-s, and FWHM of HR-XRD rocking curve was about 300 arcsec. This InSb film on Si wafer was applied to Hall element, and it passed ordinary reliability tests. INTRODUCTION Indium Antimonide (InSb) is very attractive material because its high electron mobility appropriate for high speed transistors [1] and Hall-effect devices. Its narrow band gap is also suitable for the infrared detector application [2]. These devices are usually formed on GaAs substrate or mica. But some of them are formed on Si substrate for the purpose of low cost and larger size wafer fabrication. Today, these are already put to practical use. However, InSb film formed on Si substrate has to be made thicker than 1-2 µm, or an additional buffer layer has to be inserted between InSb film and substrate to reduce defects. This fact indicates difficulty to form the high quality thin InSb film on Si substrate. A lot of work concerning to InSb epitaxial growth on Si substrate was intensively reported [3]. Almost all of work was still done on thicker InSb film than 1µm, there is no report on the InSb film having higher electron mobility over 40,000 cm2/V-s when film is thinner than 1um. Obtaining the highly-crystallized thin InSb film is very important to realize cost efficiency, or else. We investigated on the InSb epitaxial growth directly on Si substrate in order to form high crystallized thin InSb film by molecular-beam epitaxy (MBE). EXPERIMENTAL InSb film was grown by following procedure. 4 inch Si(111) wafer was prepared. This wafer was dipped into 1 wt% HF solution for 2 minutes, and rinsed by pure water. The purpose of this process is both removal of thin SiO2 layer from Si surface and termination of Si dangling bonds by hydrogen atoms. This wafer was immediately loaded into V100+ molecular beam epitaxy (MBE) system. Usually, removal of thin SiO2 layer from Si surface and rearrangement
between Si atoms are done by heating up the Si wafer to high temperature more than 800 degree C before starting the film growth. But we didn’t do it because we wanted to avoid desorption of hyd
Data Loading...
