Ge quantum well plasmon-enhanced quantum confined Stark effect modulator
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Ge quantum well plasmon-enhanced quantum confined Stark effect modulator P. Chaisakul,1 D. Marris-Morini,1 N. Abadía,1,3 J. Frigerio,2 G. Isella,2 D. Chrastina,2 S. Olivier,3 R. Espiau de Lamaestre,3 T. Bernardin,4 J.-C. Weeber,4 and L. Vivien1 1 IEF, Université Paris-Sud, CNRS, 15 rue Andrè Ampère, 91405 Orsay, France 2 L-NESS, Politecnico di Milano, Polo di Como, Via Anzani 42, I 22100 Como, Italy 3 CEA-LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France 4 ICB, Université de Bourgogne, CNRS, 9 Avenue Alain Savary, 21078 Dijon, France ABSTRACT We theoretically and experimentally investigate a novel modulation concept on silicon (Si) based on the combination of quantum confinement and plasmon enhancement effects. We experimentally study the suitability of Ge/SiGe quantum wells (QWs) on Si as the active material for a plasmon-enhanced optical modulator. We demonstrate that in QW structures absorption and modulation of light with transverse magnetic (TM) polarization are greatly enhanced due to favorable selection rules. Later, we theoretically study the plasmon propagation at the metal-Ge/SiGe QW interface. We design a novel Ge/SiGe QW structure that allows maximized overlap between the plasmonic mode and the underlying Ge/SiGe QWs. INTRODUCTION Optical interconnection is heavily investigated as an alternative to electrical interconnection for data communication between and on processor chips [1]. Optics is recognized as probably the only technologically-viable solution to overcome physical limitations of electronics in fulfilling the future chip scale data communication performance metrics. Nevertheless, despite intense research efforts, it is still unclear how the currently-proposed silicon-compatible optical solutions can meet the size, driving voltage, and energy consumption requirements for chip-scale interconnection. Due to weak electro-optical interaction, optical modulation schemes appear to require high applied voltages, long interaction length and/or precise temperature control. In this context, we theoretically and experimentally investigate a novel modulation concept on Si based on the combination of quantum confinement and plasmon enhancement effects, with a view to realizing an efficient light modulation around the telecommunication wavelength of 1.3 µm. We exploit the strong modulation mechanism based on the quantum-
confined Stark effect (QCSE) in Ge/SiGe quantum wells (QWs) and use plasmonic enhancement to enable a large overlap between optical field, active Ge/SiGe materials, and electrical bias voltages. Firstly, we experimentally study the suitability of Ge/SiGe QWs as the active material for a plasmon-enhanced optical modulator. We demonstrate that in QW structures absorption and modulation of light with transverse magnetic (TM) polarization are greatly enhanced due to favorable selection rules. A very sharp absorption peak, and strong light modulation in a Ge/SiGe QW waveguide are reported from photocurrent measurements. Later, we theoretically study the plasmon propagation of a m
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