Grid-assisted magnetron sputtering deposition of nitrogen graded TiN thin films
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Grid‑assisted magnetron sputtering deposition of nitrogen graded TiN thin films F. C. da Silva1,2 · M. A. Tunes3 · P. D. Edmondson4 · N. B. Lima5 · J. C. Sagás6 · L. C. Fontana6 · C. G. Schön1 Received: 30 November 2019 / Accepted: 26 March 2020 © Springer Nature Switzerland AG 2020
Abstract Titanium Nitride (TiN) films were obtained using the grid-assisted magnetron sputtering deposition technique on Al substrates in two conditions: under constant and variable nitrogen concentration along the thin solid film thickness. The formation of a film with variable N concentration (herein referred as graded film) was confirmed using energy filtered transmission electron microscopy, X-ray photoelectron spectroscopy and grazing incidence X-ray diffraction. The TiN thin films microstructures were also analysed using scanning and transmission electron microscopies (SEM and TEM). The viability of synthesizing TiN thin films with variable N concentration is herein proposed as an alternative method for tailoring the properties of such functional coating materials. Keywords Titanium nitride · Electron microscopy · X-ray photoelectron microscopy · Thin solid films · Graded materials
1 Introduction Durability of machining tools is largely improved by deposition of hard coatings as TiN [1–4] due to an enhanced wear resistance [5]. Nonetheless, the application of titanium nitride (TiN) thin films is not limited to machining tools. Due to its mechanical, optical and electrical properties, TiN has widespread applications in the automotive, aerospace, microelectronics and also in sanitary industries [6–15]. TiN films have been also proposed for application in nuclear reactors as coatings on nuclear fuel cladding alloys. The intention would be to increase the protection against steam oxidation in particular in the event of a severe loss-of-coolant accident [16, 17]. A recent assessment of the radiation damage resistance of these TiN thin solid films, however, seems to preclude this application [18].
TiN thin films are quite stable stoichiometric ceramic compounds [19]. Nevertheless, the properties of such thin films can be changed via deposition and growth conditions, for example, by controlling the energy transfer to the substrate and the atomic N/Ti flux ratio which affects the structure, composition, and preferred orientation of the films [20]. The energy transfer can be changed either by heating the substrate or by applying an potential bias during deposition, resulting in the alteration of the electromagnetic field configuration within the deposition chamber. Specific N/Ti ratios of the produced film can be obtained by changing the N2–Ar plasma composition and the deposition rate [20]. The alteration of intrinsic properties like structure, crystalline orientation (texture) and residual stresses states [21] can modify functional properties of the synthesized film such as fracture toughness and adhesion [19–21].
* F. C. da Silva, [email protected] | 1Department of Metallurgical and Materials Engineering, Escola Politécnica da Unive
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