Group III Nitrides
Optical, electrical and mechanical properties of group III nitrides, including of AlN, GaN, InN and their ternary and quaternary compounds are discussed. The driving force for semiconductor nitrides is device applications for emitters and detectors in the
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Group III Nitri 32. Group III Nitrides
Optical, electrical and mechanical properties of group III nitrides, including of AlN, GaN, InN and their ternary and quaternary compounds are discussed. The driving force for semiconductor nitrides is device applications for emitters and detectors in the visible and ultraviolet (UV) portions of the optical spectrum and high-power amplifiers. Further advances in electronic and optoelectronic devices, which are imperative, require better understanding and precise measurements of the mechanical, thermal, electrical and optical properties of nitride semiconductors. Information available in the literature regarding many of the physical properties of nitrides, especially AlN and InN, is still in the process of evolution, and naturally in the subject of some controversy. This is, in part, a consequence of measurements having been performed on samples of widely varying quality. When possible, these spurious discrepancies have been disregarded. For other materials, too few measurements are available to yield a consensus, in which case the available data are simply reported. The aim of this work is to present the latest
Crystal Structures of Nitrides ................. 755
32.2 Lattice Parameters of Nitrides............... 756 32.3 Mechanical Properties of Nitrides .......... 757 32.4 Thermal Properties of Nitrides .............. 32.4.1 Thermal Expansion Coefficients ... 32.4.2 Thermal Conductivity ................. 32.4.3 Specific Heat.............................
761 761 762 764
32.5 Electrical Properties of Nitrides ............. 766 32.5.1 Low-Field Transport .................. 766 32.5.2 High-Field Transport ................. 775 32.6 Optical 32.6.1 32.6.2 32.6.3 32.7
Properties of Nitrides ................ Gallium Nitride ......................... Aluminium Nitride..................... Indium Nitride ..........................
777 778 786 789
Properties of Nitride Alloys ................... 791
32.8 Summary and Conclusions .................... 794 References .................................................. 795
available data obtained by various experimental observations and theoretical calculations.
paved the way for developing full-color displays. If the three primary-color LEDs, including red, produced by the InGaAlAs system are used in place of incandescent light bulbs in some form of a color-mixing scheme, they would provide not only compactness and longer lifetime, but also lower power consumption for the same luminous flux output. Additional possible applications include use in agriculture as light sources for accelerated photosynthesis, and in health care for diagnosis and treatment. Unlike display and lighting applications, digital information storage and reading require coherent light sources because the diffraction-limited optical storage density increases approximately quadratically with decreasing wavelength. The nitride material system, when adapted to semiconductor lasers in blue and UV wavelengths, offers increased data storage density, possibly as high
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