Thermodynamic properties of group-III nitrides and related species
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Internet Journal of Nitride Semiconductor Research:
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Thermodynamic properties of group-III nitrides and related species I. N. Przhevalskii, S. Yu. Karpov and Yu. N. Makarov MRS Internet Journal of Nitride Semiconductor Research / Volume 3 / January 1998 DOI: 10.1557/S1092578300001022, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300001022 How to cite this article: I. N. Przhevalskii, S. Yu. Karpov and Yu. N. Makarov (1998). Thermodynamic properties of group-III nitrides and related species . MRS Internet Journal of Nitride Semiconductor Research, 3, pp e30 doi:10.1557/S1092578300001022 Request Permissions : Click here
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MRS
Internet Journal Nitride Semiconductor Research
Thermodynamic properties of group-III nitrides and related species I. N. Przhevalskii1, S. Yu. Karpov2 and Yu. N. Makarov3 1Russian
Research Center "Applied Chemistry" , Ltd (St.Petersburg, Russia), 3Lehrstuhl für Strömungsmechanik, University of Erlangen-Nürnberg, 2Soft-Impact
(Received Friday, June 19, 1998; accepted Wednesday, September 30, 1998)
A database for thermodynamic properties of group-III nitrides and relevant species involved into growth of these materials is developed in this paper. Standard formation enthalpies of materials and coefficients of polynomial approximations of the reduced Gibbs free energies are collected in the tables. They allow one to determine the Gibbs free energy, enthalpy, entropy and specific heat of a species as a function of temperature. The database covers solid and gaseous group-III nitrides, elemental species, gaseous metal-organic compounds, chlorides and hydrides of group-III elements, nitrogen containing precursors and organic byproducts of various chemical reactions proceeding during growth processes. Thermodynamic properties of adducts which can be formed in the vapor phase while mixing ammonia and metal-organic compounds are presented in the database as well. Much of the data given in this paper is presented for the first time. All the data are checked for selfconsistency and therefore can be used for thermodynamic calculations.
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Introduction
Group-III nitrides are semiconductor materials that are expected to play a revolutionary role in modern optoelectronics and high-power, high-temperature electronics. Development of the technological base for growth and processing of these materials demands detailed knowledge of their physical properties. Much effort has been made in the recent years to examine various characteristics and parameters of GaN, AlN, InN and their ternary compounds. Some carefully selected results are summarized in reference [1]. However, the scientific field related to group-III nitrides has broadened so quickly that the appearance of such books does not keep pace with the needs of the nitride community. More ongoing deve
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