Ion Beam Slicing of Single Crystal Oxide Thin Films
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Ion Beam Slicing of Single Crystal Oxide Thin Films S. Thevuthasan, V. Shutthanandan, W. Jiang and W. J. Weber Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory (PNNL), Richland, WA 99352, [email protected] ABSTRACT Epitaxial thin film liftoff using the ion-slicing method has been applied to SrTiO3 single crystals. Rutherford backscattering spectrometry along with channeling (RBS/C) has been used to investigate the relative disorder as a function of temperature from the samples that were irradiated by 40 KeV hydrogen ions to a fluence of 5.0x1016 H+/cm2. Hydrogen profiles were also measured as a function of annealing temperature to understand the role of hydrogen in the ion slicing process. Film cleavage occurred during or after annealing at 570 K, and cleaved film has been successfully transferred to a silicon substrate using ceramic adhesive. INTRODUCTION Thin film cleaving using hydrogen implantation and subsequent thermal treatment was first reported for Si by Bruel in 1995 [1]. Since this discovery, there has been growing interest in applying this technique to lifting off thin films of semiconductors [2-8]. In this method, first hydrogen, helium or a combination of these two are incorporated into the material through the use of implantation. Subsequent thermal, pressure or etching treatment will cleave the film in the vicinity of the region where the implanted species come to rest in the material. The sliced film can be transferred to another substrate using material bonding prior to cleavage. The advantage of this method is that the dissimilar materials can be integrated together regardless of the lattice mismatch between the materials. In addition, the thickness of the integrated materials can be controlled by choosing the ion energy, which can be translated as a depth range in the material. In the recent past, this method has been shown as an effective method for achieving heterogeneous integration of many semiconductor integrated systems. Although the application of the ion slicing method has been extensively studied for conventional semiconductor materials, a fundamental understanding of the basic mechanisms controlling the crystal slicing is still lacking. In addition, the studies related to thin film liftoff in oxides and ceramics are limited in the literature. Metal oxides possess many properties such as band gaps spanning the visible and UV, electronic properties ranging from superconducting to insulating, magnetic properties ranging from ferromagnetic to antiferromagnetic and dielectric properties ranging from low-k to ferroelectric and piezoelectric. As such, the technological importance of oxide materials is extensive in many different areas. In recent years, a number of techniques including molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) have been used to grow single crystal epitaxial oxide thin films on various substrates including silicon. However, because of large lattice mismatch and the reactive nature of Si to oxygen, it is very difficult to obtai
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