Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
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Internet Journal of Nitride Semiconductor Research:
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Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire E. L. Piner, F. G. McIntosh, J. C. Roberts, M. E. Aumer, V. A. Joshkin, S. M. Bedair and N. A. El-Masry MRS Internet Journal of Nitride Semiconductor Research / Volume 1 / January 1996 DOI: 10.1557/S1092578300002155, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300002155 How to cite this article: E. L. Piner, F. G. McIntosh, J. C. Roberts, M. E. Aumer, V. A. Joshkin, S. M. Bedair and N. A. El-Masry (1996). Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire . MRS Internet Journal of Nitride Semiconductor Research, 1, pp e43 doi:10.1557/S1092578300002155 Request Permissions : Click here
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Volume 1, Article 43
Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire E. L. Piner missing record for mat.mte.ncsu.edu F. G. McIntosh, J. C. Roberts, M. E. Aumer, V. A. Joshkin, S. M. Bedair Electrical and Computer Engineering Department, North Carolina State University N. A. El-Masry missing record for mat.mte.ncsu.edu This article was received on June 11, 1996 and accepted on December 17, 1996.
Abstract High quality InGaN films have led to the development of LEDs and blue lasers. The quaternary AlInGaN however, represents a more versatile material since the bandgap and lattice constant can be independently varied. We report on such films grown on (0001) sapphire substrates in an atmospheric pressure MOCVD reactor at 750-800°C. The ternary films have a composition of up to 40% InN and the quaternary films were grown in the composition range of 0 to 20% AlN and 0 to 20% InN. The quaternary compositions studied by EDS and the lattice constants from double crystal XRD followed Vegard’s law indicating solid solubility for the range studied. Room temperature PL is dominated by band edge emission for InGaN and AlInGaN, at low AlN%. Higher AlN alloys of AlInGaN had PL dominated by deep levels. AlInGaN/InGaN and AlGaN/InGaN heterostructures were grown with abrupt interfaces. We emphasize the most important growth parameters for the growth of high quality ternary and quaternary thin films. The structural, electrical and optical properties of these In-based ternary and quaternary films and their lattice matched and strained heterostructures will also be presented.
1. Introduction Device quality InGaN films have led to the development of LEDs and blue laser diodes (LDs) by Nichia Chemical Industries, Ltd. [1] [2] Thus, the use of III-nitrides as commercially viable devices has been proven. These achievements not withstanding, the growth of InGaN is hindered by several difficulties. They include: 1. The weak In-N bond necessitating the use of a high equilibr
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