Growth Chemistry of Ultrathin Silicon Nitride and Oxynitride Passivation Layers on Si(100)

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GROWTH CHEMISTRY OF ULTRATHIN SILICON NITRIDE AND OXYNITRIDE PASSIVATION LAYERS ON Si(100) A. Kamath*, B.Y. Kim*, P.M. Blass**, Y.M. Sun**, J.M. White**, and D.L. Kwong* * Microelectronics Research Center, Department of Electrical and Computer Engineering ** Center for Materials Chemistry, Department of Chemistry and Biochemistry The University of Texas at Austin, Austin, TX 78712 ABSTRACT We have studied the thermal growth chemistry and bonding structure of three promising ultrathin (5-20A), nitrogen rich passivation layers on Si(100), namely-Si3N4, NO/Si(100) grown oxynitride and NO annealed SiO2. These films are intended to serve as substrates with excellent diffusion barrier/interface properties during deposition of high- K dielectrics such as Ta205, with tSiO2 equivalent

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