Growth of Crystalline Silicon Carbide by CVD Using Chlorosilane Gases
- PDF / 167,858 Bytes
- 10 Pages / 612 x 792 pts (letter) Page_size
- 56 Downloads / 233 Views
0911-B02-03
Growth of Crystalline Silicon Carbide by CVD Using Chlorosilane Gases M. J. Loboda1, M. F. MacMillan1, J. Wan1, G. Chung1, E. Carlson1, Y. Makarov2, A. Galyukov2, and M. J. Molnar3 1 Science and Technology, Dow Corning Compound Semiconductors, PO Box 994, Mail Stop AUB1007, Midland, MI, 48686 2 Semiconductor Technology Research, Inc., 12901 Mill Shed Dr., Richmond, VA, 23112 3 Hemlock Semiconductor Corporation, 12334 Geddes Rd., Hemlock, MI, 48426
ABSTRACT The forefront of semiconductor silicon carbide technology now approaches commercialization for both materials and device technology. The commercialization of SiC epitaxy processes requires improvement in defect density, uniformity and repeatability. Especially problematic are graphite particles, gas phase nucleation of particles and the limitations placed on achieving growth rates that can positively impact process costs. When it approached the same historical point of development, silicon epitaxy technology shifted to the use of chlorosilane precursor gases to suppress gas phase nucleation and achieve targeted growth rates. Recent work on SiC epitaxy chemistry now investigates the use of HCl, halocarbons and most recently chlorosilane precursors. This paper will review the original work on gas phase nucleation and its control in silicon epitaxy processes using HCl additives and chlorosilanes. Using established dissociation pathways for chlorosilanes, equilibrium chemical reaction models are used to assess the impact of HCl, halocarbons and chlorosilane precursors on growth rates and particle formation SiC epitaxy. Experimental data is presented on the comparative performance of HCl additive and chlorosilane precursors in SiC epitaxy and film properties. INTRODUCTION Chemical vapor deposition (CVD) technology used in silicon carbide epitaxy for semiconductor device applications historically teaches using hydrogen, monosilane (SiH4) and hydrocarbon (CxHy) chemistry. This is an interesting contrast to the use of chlorosilane (H4xSiClx) chemistry established in mass production silicon epitaxy processes for integrated circuit fabrication [1] and also the organo-chlorosilane ((CH3)ySiClx) chemistry often used in high temperature CVD processes for high temperature SiC coating on monolithic graphite. Semiconductor grade chlorosilane precursors have properties that are very suitable for use in SiC epitaxy at high temperatures (1100 C
Data Loading...
