Growth of diamond and diamond-like films using a low energy ion beam
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Growth of diamond and diamond-like films using a low energy ion beam Y. P. Guoa) and K. L. Lam Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong
K. M. Lui Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, and Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong
R. W. M. Kwokb) and K. C. Hui Department of Chemistry, The Chinese University of Hong Kong, Shatin, and Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong (Received 25 July 1997; accepted 10 November 1997)
Ion beam deposition provides an additional control of ion beam energy over the chemical vapor deposition methods. We have used a low energy ion beam of hydrogen and carbon to deposit carbon films on Si(100) wafers. We found that graphitic films, amorphous carbon films, and oriented diamond microcrystallites could be obtained separatedly at different ion beam energies. The mechanism of the formation of the oriented diamond microcrystallites was suggested to include three components: strain release after ion bombardment, hydrogen passivation of sp 3 carbon, and hydrogen etching. Such a process can be extended to the heteroepitaxial growth of diamond films.
I. INTRODUCTION
The preparation of carbon or diamond-like films by ion beam depositions have experienced over two decades of developments.1 Several modified ion-beam-based deposition processes have been explored to produce hard and transparent carbon films. These techniques include mass-separated C1 and pure C1 ion beam deposition,2–5 dual beam deposition by sputtering from a graphite target with simultaneous bombardment of argon ions on the growing films,6 pulsed plasma acceleration using methane gas,7 and laser ion source radiation.8 It is worthwhile to note that some ion-activated processes traditionally employ noble gas ions (,1 kV) to bombard the growing films. This allows a “thermal spike” effect9 in growing film to promote nonthermoequilibrium chemical reactions for the formation of some specific species. In general, the advantage of using an ion beam deposition technique is the controllability of the energies of the carbon or hydrocarbon ions incident on the growing surface of the films. Such a control allows the breakup of desired bonds, formation of the specific bonds, rearrangement of the atoms, and the fine tuning capability to obtain a desirable set of film properties. The ion beam deposition technique also allows independently varying the species, ion energy, and current density of the ion beam and the substrate temperature to control
a)
On leave from Department of Physics, Lanzhou University, People’s Republic of China. b) e-mail: [email protected] J. Mater. Res., Vol. 13, No. 8, Aug 1998
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the formation of different phases in the carbon film and anisotropic growth of different crystal faces. In fact, the studies of ion beam depositions have led to a better
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