Growth of halide perovskites thin films for thermoelectric applications
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MRS Advances © 2019 Materials Research Society DOI: 10.1557/adv.2019.279
Growth of halide perovskites thin films for thermoelectric applications Shrikant Saini1,*, Ajay Kumar Baranwal2, Tomohide Yabuki1, Shuzi Hayase2, and Koji Miyazaki1 1
Department of Mechanical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu, Japan.
2 i-Powered Energy System Research Center (iPRC), The University of Electro-Communications, Chofu Tokyo, Japan.
* [email protected]
ABSTRACT
Thermoelectric materials can play an important role to develop a sustainable energy source for internet of things devices near room temperature. In this direction, it is important to have a thermoelectric material with high thermoelectric performance. Cesium tin triiodide (CsSnI3) single crystal perovskite has shown high value of Seebeck coefficient and ultra low thermal conductivity which are necessary conditions for high thermoelectric performance. Here, we report the thermoelectric response of CsSnI3 thin films. These films are prepared by cost effective wet spin coating process at different baking temperature. Films were characterized using X-ray diffraction and scanning electron microscopy. In our case, films baked at 130°C for 5 min have shown the best thermoelectric performance at room temperature with: Seebeck coefficient 115 ȝV/K and electrical conductivity 124 S/cm, thermal conductivity 0.36 W/m·K and figure of merit ZT of 0.137.
INTRODUCTION The absence of any moving part in thermoelectric energy conversion can help to develop energy scores for internet of things devices. To develop such energy harvesting modules, thin films are more compatible due to their shape-ability which can further lead in developing flexible and printed electronics [1-3]. Thermoelectric FRQYHUVLRQHIILFLHQF\RIDPDWHULDOLVTXDQWLILHGE\ILJXUHRIPHULW=7 ı6 27ț ZKHUHı
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EXPERIMENT DETAILS
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CsSnI3 thin films of thickness 600 nm were prepared by spin coating technique on a glass substrate PP ; PP in a nitrogen glove box. The yellow precursor solution of 1 M CsSnI3 was prepared by mixing of CsI and SnI2 in DMSO:DMF (volume ratio of VROYHQt at 40°C for 2 h. The baking temperature was varied as 50°C, 70°C, 100°C, 130°C, and 150°C. Other fabrication parameters such as EDNLQJ WLPH PLQ VSLQFRDWLQJWLPH V and spin coating speed (5000 rpm were kept constant. Toluene was used as an anti-solvent at 10 s time mark after spin coating CsSnI3 solution. The formation of orthorhombic phase CsSnI3 crystals was confirmed by colour of thin films that turned to black from yellow during baking process. The thickness of the films was measured by Dektak profilometer.
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