Growth of InGaAsP films in a Multi-Wafer high Speed Rotating Disk Reactor by Mocvd
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GROWTH OF InGaAsP FILMS IN A MULTI-WAFER HIGH SPEED ROTATING DISK REACTOR BY MOCVD Paul Reinert, Mark McKee, Peter E. Norris, and Richard A. Stall, EMCORE Corporation, 35 Elizabeth Avenue, Somerset, New Jersey 08873
Introduction As the demands for InP epitaxial materials grow, the need for larger However, uniformity of throughput growth techniques becomes important. thickness and particularly composition of InGaAs and InGaAsP films has This has limited much of the InGaAsP growth work to proved troublesome. The purpose of this work is to demonstrate good single wafer machines. film properties and uniformity on a multi-wafer machine that holds three, two-inch diameter wafers.
Experimental Apparatus These studies were performed using an EMCORE GS/3200 system with a 5" diameter susceptor capable of holding three, symmetrically placed, Figure 1 displays the system schematic of the two-inch diameter wafers. System gas flows are switched between the growth line equipment used. and the vent line in a pressure balanced mode using low dead space inPrevious measurements using a residual gas analyzer injector blocks. dicated switching times as fast as the detection limit of approximately 0.8 seconds.
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ALKYL CEUVEuRY LV:u•cS Figure 1:
L_4CORE GS/3000 Series MOCVD System Schematic
Mat. Res. Soc. Symp. Proc. Vol. 145. @1989 Materials Research Society
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The growth Figure 2 displays the geometry of the growth chamber. chamber is of stainless steel construction and contains a resistively heated, molybdenum susceptor. The wafers rest directly on a wafer carrier which is transferred between a UHV, stainless steel loadlock and The wafer carrier may be the heated susceptor in the growth chamber. The temperature is monitored by a rotated at speeds up to 2000 RPM. thermocouple or infrared pyrometry. A viewport with a small aperture is used to direct a laser beam of green light onto the center of the disk. Light scattering from a wafer positioned in the center of the disk can This arrangement be viewed from another viewport during growth. provides an in-situ monitor for surface roughness.
Figure 2:
Rotating Disk Growth Chamber Geometry
Reactants are introduced through injector
tubes which enter through
The injector tubes are dividing flow the side of the growth chamber. manifolds, with multiple orifices that direct a flow of reactants to the growth surface. A separate, larger flow and uniform across the top of the growth chamber is directed downward to the wafers. We refer to this flow hereafter as the shroud flow. Experimental Procedure 0 0 Growth temperatures were in a range of 630 C - 660 C with V/III A Growth rates ranges from 160R/min to 350R/min. ratios of 50-200. high temperature bakeout was performed with temperatures of pre-growth 0 650-690 C for 15 minutes. Growth runs were performed at pressures ranging from 30 to 90 Torr although most runs were performed at 60 Torr.
semi-insulating InP oriented The substrates used were Fe-doped, Cleaning was performed with organic directly on the [100] di
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