Mocvd Growth of CdTe and HgTe on GaAs in a Vertical, High-Speed, Rotating-Disc Reactor
- PDF / 738,477 Bytes
- 6 Pages / 420.48 x 639 pts Page_size
- 105 Downloads / 200 Views
MOCVD GROWTH OF CdTe AND HgTe ON GaAs IN A VERTICAL, HIGH-SPEED, ROTATING-DISC REACTOR
G.S. Tompa, C.R. Nelson, P.D. Reinert, M.A. Saracino, L.A. Terrill, and P.C. Colter.* EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873. *Present Address - North Carolina State University, Department of Electrical Computer Engineering, Box 7911, Raleigh, NC 27695-7911
and
ABSTRACT The metalorganic chemical vapor deposition (MOCVD) growth of CdTe and HgTe on GaAs (111) and (100) substrates in a vertical, high-speed, rotating-disc reactor was investigated. A range of total reactor pressure, carrier gas flow rate, chemical concentrations, deposition temperature, and rotation rate have been investigated in an attempt to optimize growth conditions. Diisopropyltelluride (DIPTe) and Dimethylcadmium (DMCd) were used as growth precursors. Thickness uniformity varies less than +/- 1.5% over 50 mm diameter wafers. Films having FWHM X-ray rocking curves less than 90 arcsec were obtained on GaAs (111) substrates. The films have excellent surface morphology, exhibiting less than 5xl0 4 cm" 2 orange peel dents which are 0.5 at 380 C and Te:Cd ratio = 4, see ref. 14). From the curve we would expect the growth to continue at VI/II ratios
Data Loading...
