Harmonic Analysis of AlN Piezoelectric Mesa Structures
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1129-V11-08
Harmonic Analysis of AlN Piezoelectric Mesa Structures M. Mazumdar1, Adam Kabulski2, Richard Farrell2, Sridhar Kuchibhatla2, V. Pagàn2, and D. Korakakis2,3 Department of Computer Science, Davis & Elkins College1 Lane Department of Computer Science and Electrical Engineering, West Virginia University2 National Energy Technology Laboratory, 3610 Collins Ferry Road, Morgantown, WV-265070880, USA3
ABSTRACT
In this work we report the displacement response of piezoelectric Aluminum Nitride (AlN) thin film MESA in an electrical circuit consisting of a circular MESA in series with a resistance subjected to time varying electrical loads. ANSYS was utilized for the simulation of 3D piezoelectric structures; using coupled field analysis to understand the electro-mechanical behavior of AlN thin film mesas. ANSYS applies finite element analysis (FEM) method to simulate the transient piezoelectric trends. Ringing and overshoot effects were observed in the thin simulation results on applying pulse voltages of varying frequencies to the circuit. The fast rise time of the voltage pulse could be exciting these effects. The effect of fast rising pulse voltages on the RC time constant of the circuit is still unclear at this point and needs to be further investigated.
INTRODUCTION
Some of the widely used applications of piezoelectric circular composite plates include but are not limited to synthetic jets [1, 2], micropumps [3], and medical applications [8], energy harvesting devices [4-7]. When compared to the typically used piezoelectric material such as PZT and other metal oxides, group III nitrides offer several advantages like high temperature stability and high biocompatibility in addition they have the ability to be integrated into NEMS devices [9]. Of all the group III nitrides, AlN has good chemical and mechanical stability under harsh conditions. AlN has the ability to sustain its piezoelectric properties at high temperatures. Therefore AlN is suitable for fabricating MEMS device as it can be deposited at low temperatures and the thickness of AlN films can be controlled down to a few nanometers.
Some of these clamped circular piezoelectric composites applications such as micropumps are driven by pulse oscillating waveform [10].Overshoot and ringing effects were not observed. However it has been demonstrated prior that pulse voltages can excite overshoot and ringing in piezoelectric films. Controlling the rise time of the pulse waveform [11] and implementing RC networks [12], were used to reduce the overshoot and ringing effects in the piezoelectric actuators. But damping techniques such as an RC network have not been thoroughly investigated for thin films having thicknesses in the submicron range to damp these overshooting effects. In order to fully understand the behavior of the displacement of a piezoelectric material, both the electrical and mechanical equations must be considered. These constitutive equations include time dependent variables, which can be heavily influenced by the thin film nature of thes
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