Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications
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Shuyu Bao and Yiding Lin Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), Singapore 138602, Singapore; and School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
Wei Li, P Anantha, and Lin Zhang School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
Yue Wang Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), Singapore 138602, Singapore
Jurgen Michel and Eugene A. Fitzgerald Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), Singapore 138602, Singapore; and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Chuan Seng Tanb) Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), Singapore 138602, Singapore; and School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore (Received 22 March 2017; accepted 20 July 2017)
Integration of photonic devices on silicon (Si) substrates is a key method in enabling large scale manufacturing of Si-based photonic–electronic circuits for next generation systems with high performance, small form factor, low power consumption, and low cost. Germanium (Ge) is a promising material due to its pseudo-direct bandgap and its compatibility with Si-CMOS processing. In this article, we present our recent progress on achieving high quality germaniumon-silicon (Ge/Si) materials. Subsequently, the performance of various functional devices such as photodetectors, lasers, waveguides, and sensors that are fabricated on the Ge/Si platform are discussed. Some possible future works such as the incorporation of tin (Sn) into Ge will be proposed. Finally, some applications based on a fully monolithic integrated photonic–electronic chip on an Si platform will be highlighted at the end of this article.
I. INTRODUCTION
Silicon (Si) is regarded as a unifying material for integrated circuits not only for electronics but also for photonics. This is due to the fact that Si is the second most abundant element (after oxygen) in the earth’s crust and hence the cost of producing high quality Si substrates is low. Furthermore, stable oxide, good mechanical robustness, high thermal conductivity, and large area are the merits of Si substrates. Most importantly, Si complementary metal oxide semiconductor (Si-CMOS) is
Contributing Editor: Mmantsae Diale Address all correspondence to these authors. a) e-mail: [email protected] b) e-mail: [email protected] DOI: 10.1557/jmr.2017.324
the most mature, high yield, low cost, highly integratable, and scalable technology in the electronic industry.1–9 Si photonics, on the other hand, has been widely studied for shorter-reach optical interconnects such as chip-to-chip, board-to-board, and rack-to-rack communication as well as intrachip/intercore communic
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